Semiconductor device, solid-state imaging device with tantalum oxide layer formed by diffusing a material of an electrode of necessity or a counter electrode

ABSTRACT

A semiconductor device including a semiconductor layer that includes an active region, semiconductor elements that are formed using the active region, connection regions that are obtained by metalizing parts of the semiconductor layer in an island shape isolated from the active region, an insulation film that is formed to cover one main surface side of the semiconductor layer, electrodes that are disposed to face the semiconductor elements and the connection regions via the insulation film, and contacts that penetrate through the insulation film to be selectively formed in portions according to necessity among portions that connect the semiconductor elements or the connection regions to the electrodes.

RELATED APPLICATION DATA

This application is a continuation of U.S. patent application Ser. No.14/743,299 filed Jun. 18, 2015, which is a division of U.S. patentapplication Ser. No. 14/017,816 filed Sep. 4, 2013, now U.S. Pat. No.9,093,575 issued Jul. 28, 2015, the entireties of which are incorporatedherein by reference to the extent permitted by law. The presentapplication claims the benefit of priority to Japanese PatentApplication No. JP 2012-218000 filed on Sep. 28, 2012 in the JapanPatent Office, the entirety of which is incorporated by reference hereinto the extend permitted by law.

BACKGROUND

The present technology relates to a semiconductor device and a method ofmanufacturing the semiconductor device, and more particularly, to asemiconductor device in which elements are disposed 3-dimensionally bylaminating a plurality of semiconductor layers, a solid-state imagingdevice using the semiconductor device, and a method of manufacturingsuch a semiconductor device.

As one of the structures configured to achieve higher integration of asemiconductor device, a 3-dimensional structure in which elements withdifferent characteristics are laminated in a plurality of layers hasbeen suggested. In the semiconductor device having such a 3-dimensionalstructure, there are, for example, the following two configurations.

A first configuration is a configuration in which a plurality ofsubstrates in which elements are formed are prepared and thesesubstrates are bonded to each other. In this case, for example,connection electrodes connected to the elements are configured to beextracted toward the bonded surface sides of the substrates. By joiningthe extracted connection electrodes with the connection electrodes, twosubstrates are bonded so that the substrates can be electricallyconnected to each other (hitherto, for example, see Japanese UnexaminedPatent Application Publication No. 2005-268662).

A second configuration is a configuration in which elements including asecond semiconductor layer are formed on a substrate in which elementsincluding a first semiconductor layer are formed via an inter-layerinsulation film, and the elements of the layers are connected in anupper layer (hitherto, for example, see Japanese Unexamined PatentApplication Publication No. 2009-94495).

SUMMARY

In the first configuration, however, it is necessary to route theconnection electrodes on the front surface of each substrate. For thisreason, an occupation area in which the connection electrodes are wiredmay increase depending on a kind of formed circuit, and thusminiaturization of a semiconductor device may deteriorate. In the secondconfiguration, the upper and lower elements are connected in theuppermost layer. Therefore, a routing area of wirings used to connectthe elements to each other may further increase, and thus theminiaturization of a semiconductor device may further deteriorate.

It is desirable to provide a semiconductor device in which upper andlower elements can be connected without routing wirings even when aplurality of element layers are laminated, and thus miniaturization canbe achieved. It is also desirable to provide a solid-state imagingdevice using the semiconductor device and a method of manufacturing sucha semiconductor device.

According to a first embodiment of the present technology, there isprovided a semiconductor device including a semiconductor layer thatincludes an active region, semiconductor elements that are formed usingthe active region, connection regions that are obtained by metalizingparts of the semiconductor layer in an island shape isolated from theactive region, an insulation film that is formed to cover one mainsurface side of the semiconductor layer, electrodes that are disposed toface the semiconductor elements and the connection regions via theinsulation film, and contacts that penetrate through the insulation filmto be selectively formed in portions according to necessity amongportions that connect the semiconductor elements or the connectionregions to the electrodes.

In the semiconductor device with such a configuration, the connectionregions obtained by metalizing parts of the semiconductor layer in theisland shape independent from the active region are formed as electrodepads in the same layer as the active region included in thesemiconductor layer. Therefore, by selectively disposing the contactsbetween the connection regions and the electrodes and between thesemiconductor elements and the electrodes, potentials of portions of thesemiconductor elements can be extracted to the connection regionsdisposed on an opposite side from the electrodes with the insulationfilm interposed therebetween. Thus, a desired circuit can be formed byselection of disposition of the contacts without depending on onlyrouting of the wirings.

The solid-state imaging device according to an embodiment of the presenttechnology is a device that uses the semiconductor device according toan embodiment of the present technology and includes the above-describedsemiconductor device and the imaging substrate that includes thephotoelectric conversion unit.

Further, according to a first embodiment of the present technology,there is provided a method of manufacturing a semiconductor deviceincluding forming an active region in a semiconductor layer and formingconnection regions obtained by metalizing the semiconductor layer in anisland shape isolated from the active region, forming semiconductorelements using the active region, forming an insulation film that coversone main surface side of the semiconductor layer, forming contacts thatpenetrate the insulation film selectively in portions according tonecessity among portions that reach the semiconductor elements or theconnection regions, and forming electrodes of which parts are connectedto the contacts in positions at which the semiconductor elements facethe connection regions via the insulation film.

According to the above-described embodiments of the present technology,a desired circuit can be formed by selection of disposition of thecontacts without depending on only routing of the wirings, and thusminiaturization of the semiconductor device can be achieved.

DETAILED DESCRIPTION OF THE EMBODIMENTS

FIG. 1 is a plan view illustrating a semiconductor device according to afirst embodiment;

FIG. 2 is a plan view illustrating a first element layer of thesemiconductor device according to the first embodiment;

FIG. 3 is a plan view illustrating a second element layer of thesemiconductor device according to the first embodiment;

FIG. 4 is a sectional view taken along the line A1-A1′ of FIG. 1;

FIG. 5 is a sectional view taken along the line A2-A2′ of FIG. 1;

FIG. 6 is a sectional view taken along the line B1-B1′ of FIG. 1;

FIG. 7 is a sectional view taken along the line B2-B2′ of FIG. 1;

FIG. 8 is a sectional view taken along the line B3-B3′ of FIG. 1;

FIG. 9 is an equivalent circuit diagram illustrating a NAND circuitincluded in the semiconductor device according to the first embodiment;

FIG. 10 is a sectional view taken along the line A-A′ and illustrating aconnection configuration example of portions of gate electrodes in thesemiconductor device according to the first embodiment;

FIG. 11 is a sectional view taken along the line B-B′ and illustratingconnection configuration example-1 of portions of sources and drains inthe semiconductor device according to the first embodiment;

FIG. 12 is a sectional view taken along the line B-B′ and illustratingconnection configuration example-2 of portions of sources and drains inthe semiconductor device according to the first embodiment;

FIG. 13 is a diagram (part 1) illustrating a process of manufacturing afirst element layer of the semiconductor device according to the firstembodiment;

FIG. 14 is a diagram (part 2) illustrating a process of manufacturing afirst element layer of the semiconductor device according to the firstembodiment;

FIG. 15 is a diagram (part 3) illustrating a process of manufacturing afirst element layer of the semiconductor device according to the firstembodiment;

FIG. 16 is a diagram (part 1) illustrating a process of manufacturing asecond element layer of the semiconductor device according to the firstembodiment;

FIG. 17 is a diagram (part 2) illustrating a process of manufacturing asecond element layer of the semiconductor device according to the firstembodiment;

FIG. 18 is a diagram (part 3) illustrating a process of manufacturing asecond element layer of the semiconductor device according to the firstembodiment;

FIG. 19 is a diagram (part 1) illustrating a process of laminating thesemiconductor device according to the first embodiment;

FIG. 20 is a diagram (part 2) illustrating a process of laminating thesemiconductor device according to the first embodiment;

FIG. 21 is a diagram (part 3) illustrating a process of laminating thesemiconductor device according to the first embodiment;

FIG. 22 is a plan view illustrating a semiconductor device according toa second embodiment;

FIG. 23 is a sectional view taken along the line A1-A1′ of FIG. 22;

FIG. 24 is a diagram (part 1) illustrating a process of laminating thesemiconductor device according to the second embodiment;

FIG. 25 is a diagram (part 2) illustrating a process of laminating thesemiconductor device according to the second embodiment;

FIG. 26 is a diagram (part 3) illustrating a process of laminating thesemiconductor device according to the second embodiment;

FIG. 27 is a diagram (part 4) illustrating a process of laminating thesemiconductor device according to the second embodiment;

FIG. 28 is a diagram (part 5) illustrating a process of laminating thesemiconductor device according to the second embodiment;

FIG. 29 is a diagram (part 6) illustrating a process of laminating thesemiconductor device according to the second embodiment;

FIG. 30 is a diagram (part 7) illustrating a process of laminating thesemiconductor device according to the second embodiment;

FIG. 31 is a diagram (part 8) illustrating a process of laminating thesemiconductor device according to the second embodiment;

FIG. 32 is a plan view illustrating a semiconductor device according toa third embodiment;

FIG. 33 is a sectional view taken along the line A1-A1′ of FIG. 32;

FIG. 34 is a sectional view taken along the line B1-B1′ of FIG. 32;

FIG. 35 is a sectional view taken along the line B2-B2′ of FIG. 32;

FIG. 36 is an equivalent circuit diagram illustrating a NAND circuitincluded in a semiconductor device according to a third embodiment;

FIG. 37 is a diagram (part 1) illustrating a process of laminating thesemiconductor device according to the third embodiment;

FIG. 38 is a diagram (part 2) illustrating a process of laminating thesemiconductor device according to the third embodiment;

FIG. 39 is a diagram (part 3) illustrating a process of laminating thesemiconductor device according to the third embodiment;

FIG. 40 is a diagram (part 4) illustrating a process of laminating thesemiconductor device according to the third embodiment;

FIG. 41 is a sectional view illustrating a solid-state imaging deviceaccording to a fourth embodiment;

FIG. 42 is a plan view illustrating a semiconductor device (an exampleapplied to a FIN structure) according to a fifth embodiment;

FIG. 43 is a plan view illustrating a first element layer of thesemiconductor device according to the fifth embodiment;

FIG. 44 is a plan view illustrating a second element layer of thesemiconductor device according to the fifth embodiment;

FIG. 45 is a sectional view taken along the line A-A′ of FIG. 42;

FIG. 46 is a sectional view taken along the line B-B′ of FIG. 42;

FIG. 47 is a sectional view taken along the line C1-C1′ of FIG. 42;

FIG. 48 is a sectional view taken along the line C2-C2′ of FIG. 42;

FIG. 49 is a diagram (part 1) illustrating a process of manufacturingthe first element layer of the semiconductor device according to thefifth embodiment;

FIG. 50 is a diagram (part 2) illustrating a process of manufacturingthe first element layer of the semiconductor device according to thefifth embodiment;

FIG. 51 is a diagram (part 3) illustrating a process of manufacturingthe first element layer of the semiconductor device according to thefifth embodiment;

FIG. 52 is a diagram (part 4) illustrating a process of manufacturingthe first element layer of the semiconductor device according to thefifth embodiment;

FIG. 53 is a diagram (part 1) illustrating a process of manufacturingthe second element layer of the semiconductor device according to thefifth embodiment;

FIG. 54 is a diagram (part 2) illustrating a process of manufacturingthe second element layer of the semiconductor device according to thefifth embodiment;

FIG. 55 is a diagram (part 3) illustrating a process of manufacturingthe second element layer of the semiconductor device according to thefifth embodiment;

FIG. 56 is a diagram (part 4) illustrating a process of manufacturingthe second element layer of the semiconductor device according to thefifth embodiment;

FIG. 57 is a diagram (part 1) illustrating a process of laminating thesemiconductor device according to the fifth embodiment;

FIG. 58 is a diagram (part 2) illustrating a process of laminating thesemiconductor device according to the fifth embodiment;

FIG. 59 is a sectional view according to modification example 1 of thefifth embodiment;

FIG. 60 is a diagram (part 1) illustrating a laminating processaccording to modification example 1 of the fifth embodiment;

FIG. 61 is a diagram (part 2) illustrating a laminating processaccording to modification example 1 of the fifth embodiment;

FIG. 62 is a sectional view according to modification example 2 of thefifth embodiment (corresponding to the view taken along the line A-A′ ofFIG. 42);

FIG. 63 is a sectional view according to modification example 2 of thefifth embodiment (corresponding to the view taken along the line B-B′ ofFIG. 42);

FIG. 64 is a sectional view according to modification example 2 of thefifth embodiment (corresponding to the view taken along the line C1-C1′of FIG. 42);

FIG. 65 is a sectional view according to modification example 2 of thefifth embodiment (corresponding to the view taken along the line C2-C2′of FIG. 42);

FIG. 66 is a sectional view illustrating characteristic portions of asemiconductor device according to a sixth embodiment;

FIG. 67 is a sectional view illustrating a method of manufacturing thesemiconductor device according to the sixth embodiment;

FIG. 68 is a sectional view illustrating characteristic portionsaccording to a modification example of the sixth embodiment;

FIG. 69 is a sectional view (part 1) illustrating a manufacturing methodaccording to a modification example of the sixth embodiment;

FIG. 70 is a sectional view (part 2) illustrating a manufacturing methodaccording to a modification example of the sixth embodiment;

FIG. 71 is a sectional view (part 3) illustrating a manufacturing methodaccording to a modification example of the sixth embodiment;

FIG. 72 is a sectional view (part 4) illustrating a manufacturing methodaccording to a modification example of the sixth embodiment;

FIG. 73 is a diagram illustrating the configuration of an electronicdevice according to a seventh embodiment.

DETAILED DESCRIPTION OF THE EMBODIMENTS

Hereinafter, preferred embodiments of the present technology will bedescribed in detail with reference to the appended drawings. Note that,in this specification and the appended drawings, structural elementsthat have substantially the same function and structure are denoted withthe same reference numerals, and repeated explanation of thesestructural elements is omitted.

Hereinafter, embodiments of the present technology will be described inthe following order with reference to the drawings.

First Embodiment 2-Layer Structure: Basic Structure (Including NANDCircuit)

1-(1) Structure

1-(2) Manufacturing Method

Second Embodiment Example Of Lamination Structure of 3 or more Layers

2-(1) Structure

2-(2) Manufacturing Method

Third Embodiment Example Of Lamination Structure using Support Substrate(Including NAND Circuit)

3-(1) Structure

3-(2) Manufacturing Method

Fourth Embodiment Example Of Lamination Structure Applied to Solid-StateImaging Device Fifth Embodiment Example of Lamination Structure Appliedto FIN Structure

5-(1) Structure

5-(2) Manufacturing Method

5-(3) Modification Example 1 (Example of Lamination Structure of 3 ormore Layers)

5-(4) Manufacturing method of Modification Example 1

5-(5) Modification Example 2 (Example of Direct Connection BetweenContacts)

Sixth Embodiment Example of Lamination Structure using Tantalum OxideLayer

6-(1) Structure

6-(2) Manufacturing Method

6-(3) Modification Example

6-(4) Manufacturing Method of Modification Example

Seventh Embodiment Electronic Device using Solid-State Imaging DeviceFirst embodiment 2-Layer Structure: Basic Structure (Including NANDCircuit) <1-(1) Structure>

FIG. 1 is a plan view illustrating a schematic configuration of asemiconductor device according to a first embodiment. A semiconductordevice 1 of the first embodiment illustrated in the drawing is asemiconductor device that has a 3-dimensional structure in which a firstelement layer 10-1 and a second element layer 10-2 are laminated. FIG. 2is a plan view illustrating the first element layer 10-1. FIG. 3 is aplan view illustrating the second element layer 10-2. The first elementlayer 10-1 and the second element layer 10-2 illustrated in thesedrawings are bonded to each other so that surfaces on whichsemiconductor elements are formed face each other, and thus arecharacterized by the connection state of the semiconductor elementsbetween the first element layer 10-1 and the second element layer 10-2.

Hereinafter, a case in which the detailed configuration of thesemiconductor device 1 is applied to a semiconductor device including aNAND circuit which is an example of a digital circuit will beexemplified. Here, the detailed configuration will be described in theorder of <first element layer 10-1>, <second element layer 10-2>, and<wiring layer 11> formed on an outside of a laminate of the first andelement layers with reference to the plan views of FIGS. 1 to 3 andsectional views (FIGS. 4 to 8) of other portions taken along the linesA1-A1′, A2-A2′, B1-B1′, and so on of the plan views. FIG. 9 is anequivalent circuit diagram illustrating the NAND circuit formed in thesemiconductor device 1.

<First Element Layer 10-1>

The first element layer 10-1 illustrated in the plan views of FIGS. 1and 2 and the sectional views of FIGS. 4 to 8 includes n-typetransistors nTr1, nTr2, and nTr3 on one main surface of thesemiconductor substrate 21. A laminated insulation film 27 (illustratedonly in the sectional views) covering such n-type transistors nTr1,nTr2, and nTr3 and counter electrodes 29 are formed in this order on theone main surface side of the semiconductor substrate 21, and contacts 31are also formed to penetrate through the laminated insulation film 27.The details of these constituent elements are as follows.

[Semiconductor Substrate 21]

The semiconductor substrate 21 includes an active region 21 a on a frontsurface layer on the one main surface side. The active region 21 a is aregion that is surrounded by an element isolation region 21 b of which acircumference is of a thin groove type. The n-type transistors nTr1,nTr2, and nTr3 to be described below are formed using the active region21 a.

Such a semiconductor substrate 21 may be formed of, for example, silicon(Si), but an embodiment of the present technology is not limitedthereto. The semiconductor substrate may be formed of anothersemiconductor material suitable for the n-type transistors nTr1, nTr2,and nTr3. Examples of other materials include germanium (Ge), silicongermanium (SiGe), silicon carbide (SiC), carbon (C), carbon nanotubes,graphene, gallium arsenide (GaAs), and indium gallium arsenide (InGaAs).Using the first element layer 10-1 and the semiconductor substrate 21formed of, particularly, indium gallium arsenide (InGaAs) among theabove materials, high performance of the n-type transistors nTr1, nTr2,and nTr3 is achieved.

The semiconductor substrate 21 may be a substrate (a so-called SOIsubstrate) in which a thin-film semiconductor layer is formed on aninsulation substrate. In this case, the active region 21 a and theelement isolation region 21 b are assumed to be formed in thissemiconductor layer.

[n-type Transistors nTr1, nTr2, and nTr3]

The n-type transistors nTr1, nTr2, and nTr3 are elements formed usingthe active region 21 a. Each of the n-type transistors nTr1, nTr2, andnTr3 includes a gate insulation film 23 (illustrated only in thesectional views) covering the one main surface side of the semiconductorsubstrate 21 and a gate electrode 25 (see FIGS. 2, 4, and 5) disposed totraverse this active region 21 a via the gate insulation film.

Here, the gate insulation film 23 is formed using, for example, a highdielectric film. Examples of the high dielectric film include not only asilicon nitride film (SiN) but also a hafnium oxide film (HfO₂), atantalum oxide film (TaO₂), an aluminum oxide film (AlO₂), andcorresponding nitride films.

The gate electrode 25 may be used by selecting a material suitable forthe n-type transistor in consideration of, for example, a work function.

In each of the n-type transistors nTr1, nTr2, and nTr3, the activeregion 21 a interleaved with the gate electrode 25 and located at bothsides thereof is configured as a source and drain S/D (see FIGS. 6 to8), and the source and drain S/D is configured to be shared by theadjacent transistors. This source and drain S/D is an n-type region andmay be metalized. The active region 21 a superimposed on the gateelectrode 25 is a portion serving as a channel region and remaining as aregion which does not become the n-type region, is not metalized, andthus remains as a region in which semiconductor characteristics aremaintained.

FIG. 4 is a sectional view taken in the extension direction of the gateelectrode 25 in the n-type transistor nTr1. FIG. 5 is a sectional viewtaken in the extension direction of the gate electrode 25 in the n-typetransistor nTr2. As illustrated in these drawings, each gate electrode25 is extracted with a sufficient length from the active region 21 a toa region superimposed on the element isolation region 21 b so that thisgate electrode comes into contact with the gate electrode 25 at theposition superimposed on the element isolation region 21 b.

[Laminated Insulation Film 27]

The laminated insulation film 27 is formed to embed the n-typetransistors nTr1, nTr2, and nTr3 on the one main surface side of thesemiconductor substrate 21 and is formed as a planarized insulation filmwith a planar surface. The laminated insulation film 27 is formed to bejoined with an insulation film 27′ of the second element layer 10-2 tobe described below.

[Counter Electrodes 29]

The plurality of counter electrodes 29 are the electrodes 29 facingelectrodes 29′ formed in the second element layer 10-2 to be describedbelow and are formed on one main surface side of the laminatedinsulation film 27 in a one-to-one joining state with the electrodes29′. The counter electrodes 29 are each wired in the extension directionof the gate electrode 25 and are each disposed on both sides of theactive region 21 a so that one end side of the counter electrode isdisposed to be superimposed on the active region 21 a and the other endside thereof is disposed to be superimposed on the element isolationregion 21 b.

The six counter electrodes 29 described above are disposed in each ofthe n-type transistors nTr1, nTr2, and nTr3. That is, in each of then-type transistors nTr1, nTr2, and nTr3, two counter electrodes 29 areformed so that one ends thereof are superimposed on both ends of eachgate electrode 25 in its extension direction. Further, in each of then-type transistors nTr1, nTr2, and nTr3, two counter electrodes 29 aredisposed such that one ends thereof are superimposed on portions of theactive region 21 a on each of both flanks of the gate electrode 25, thatis, the source and drain S/D, in other words, a total of four counterelectrodes 29 are disposed. Thus, a total of six counter electrodes 29are disposed in each of the n-type transistors nTr1, nTr2, and nTr3.However, the n-type transistor nTr2 disposed in the middle shares thesource and drain S/D with both of the n-type transistors nTr1 and nTr3.Therefore, a total of fourteen counter electrodes 29 are disposed in thethree n-type transistors nTr1, nTr2, and nTr3.

Such counter electrodes 29 have a constant planar shape and are arrangedregularly at constant intervals in the arrangement direction of the gateelectrodes 25.

The above-described counter electrodes 29 are formed as embeddedelectrodes that are embedded in the laminated insulation film 27, aredisposed to have the same height as the one main surface of thelaminated insulation film 27, and are formed of, for example, copper(Cu).

[Contacts 31]

The contacts 31 are formed to penetrate through the laminated insulationfilm 27. The contacts 31 are selectively formed in portions according tonecessity among portions that connect the gate electrodes 25 and thesource and drain S/D to the counter electrodes 29 in the n-typetransistors nTr1, nTr2, and nTr3. Of the portions, the portions thatconnect the gate electrodes 25 to the counter electrodes 29 refer to sixportions in which the gate electrodes 25 and the counter electrodes 29are disposed to be superimposed on each other in the element isolationregion 21 b on the outside of the active region 21 a. Further, theportions that connect the source and drain S/D to the counter electrodes29 refer to eight portions in which the active region 21 a and thecounter electrodes 29 are disposed to be superimposed on each otherwithout intervention of the gate electrodes 25.

Of the portions, the contacts 31 penetrating through the laminatedinsulation film 27 are selectively formed in the portions necessaryaccording to a circuit formed using the n-type transistors nTr1, nTr2,and nTr3. That is, the connection states between the n-type transistorsnTr1, nTr2, and nTr3 and the counter electrodes 29 are selected byselection of the positions of the portions in which the contacts 31 areformed among the above-described portions.

For example, in the present semiconductor device 1, the NAND circuit isformed using two n-type transistors nTr1 and nTr2, and thus thepositions at which the contacts 31 are formed are selected as follows.

First, referring to FIGS. 2, 4, and 5, the contacts 31 are formed toconnect the gate electrodes 25 of the n-type transistors nTr1 and nTr2to the counter electrodes 29 disposed to be superimposed on the gateelectrodes. Although two counter electrodes 29 are disposed to besuperimposed on each gate electrode 25 in this case, each gate electrode25 may be connected to at least one counter electrode 29.

Further, referring to FIGS. 2 and 6 to 8, the contacts 31 are formed toconnect the sources and drains S/D not shared by the two n-typetransistors nTr1 and nTr2 to the counter electrodes 29 disposed to besuperimposed on the sources and drains S/D. Although two counterelectrodes 29 are disposed to be superimposed on each source and drainS/D in this case, the source and drain S/D may be connected to at leastone counter electrode 29.

<Second Element Layer 10-2>

The second element layer 10-2 illustrated in the plan views of FIGS. 1and 3 and the sectional views of FIGS. 4 to 8 includes p-typetransistors pTr1, pTr2, and pTr3 on one main surface (on the side of thefirst element layer 10-1) of a thinned semiconductor layer 21′. Alaminated insulation film 27′ (illustrated only in the sectional views)covering these p-type transistors pTr1, pTr2, and pTr3 and electrodes29′ are formed in this order on the one main surface side of thesemiconductor layer 21′, and contacts 31′ are also formed to penetratethrough the insulation film 27′.

In particular, the semiconductor layer 21′ is characterized by includingconnection regions 21 c′ in addition to an active region 21 a′. Theseconnection regions are regions different from the first element layer10-1. Hereinafter, these constituent elements will be described indetail.

[Semiconductor Layer 21′]

The semiconductor layer 21′ is formed of a thin-film semiconductor andincludes the connection regions 21 c′ in addition to the active region21 a′. The active region 21 a′ and the connection regions 21 c′ areregions of which circumferences are surrounded by an element isolationregion 21 b′ with an insulation property. Of the regions, the activeregion 21 a′ form parts of the p-type transistors pTr1, pTr2, and pTr3to be described below.

On the other hand, the connection regions 21 c′ are regions that areformed such that parts of the semiconductor layer 21′ are metalized inan island shape isolated from the active region 21 a′, and may have thesame configuration as a source and drain S/D′ formed in the activeregion 21 a′. Each connection region 21 c′ is formed in an independentisland shape at a position superimposed on one end side of eachelectrode 29′ to be described below extracted to the outside of theactive region 21 a′.

Accordingly, in the case of the exemplary configuration in whichfourteen electrodes 29′ are formed in the second element layer 10-2, theconnection region 21 c′ is formed at each of the fourteen independentpositions.

Such semiconductor layers 21′ may be formed using silicon (Si), but anembodiment of the present technology is not limited thereto. Differentsemiconductor materials suitable for the p-type transistors pTr1, pTr2,and pTr3 may be used. For example, the same material as that of thesemiconductor substrate 21 forming the first element layer 10-1 is usedas a material other than silicon. In particular, the high performance ofthe p-type transistors pTr1, pTr2, and pTr3 is achieved using thesemiconductor layer 21′ formed of germanium (Ge).

[p-type Transistors pTr1, pTr2, and pTr3]

The p-type transistors pTr1, pTr2, and pTr3 are elements formed usingthe active region 21 a′. Each of the p-type transistors pTr1, pTr2, andpTr3 includes a gate insulation film 23′ (illustrated only in thesectional views) covering one main surface side of the second elementlayer 10-2 and a gate electrode 25′ disposed to traverse the activeregion 21 a′ via this gate insulation film.

Here, the gate insulation film 23′ is formed using the same highdielectric film as the gate insulation film 23 of the n-type transistorsnTr1, nTr2, and nTr3.

On the other hand, the gate electrode 25′ may be used by selecting amaterial suitable for the p-type transistor in consideration of, forexample, a work function.

In each of the p-type transistors pTr1, pTr2, and pTr3, the activeregion 21 a′ interleaved with the gate electrode 25′ and located at bothsides thereof is configured as a source and drain S/D′, and the sourceand drain S/D′ is configured to be shared by the adjacent transistors.This source and drain S/D′ is a p-type region and may be metalized. Theactive region 21 a′ superimposing the gate electrode 25′ is a portionserving as a channel region and remaining as a region which does notbecome the n-type region, is not metalized, and thus remains as a regionin which semiconductor characteristics are maintained.

FIG. 4 is a sectional view taken in an extension direction of the gateelectrode 25′ in the p-type transistor pTr1. FIG. 5 is a sectional viewtaken in the extension direction of the gate electrode 25′ in the p-typetransistor pTr2. As illustrated in these drawings, each gate electrode25′ is extracted with a sufficient length from the active region 21 a′to a position superimposed on the element isolation region 21 b′ so thatthis gate electrode comes into contact with the gate electrode 25′ atthe position superimposed on the element isolation region 21 b′.

[Insulation Film 27′]

The insulation film 27′ is formed to embed the p-type transistors pTr1,pTr2, and pTr3 on the one main surface side of the second element layer10-2 and is formed as a planarized insulation film with a planarsurface. The insulation film 27′ is formed to be joined with thelaminated insulation film 27 of the first element layer 10-1.

[Electrodes 29′]

The plurality of electrodes 29′ are the electrodes 29′ facing thecounter electrodes 29 formed on the side of the above-described firstelement layer 10-1 and are formed on the one main surface side of theinsulation film 27′ in a one-to-one joining state with the counterelectrodes 29. The electrodes 29′ are each wired in the extensiondirection of the gate electrode 25′ and are each disposed on both sidesof the active region 21 a′ so that one end side of the electrode isdisposed to be superimposed on the active region 21 a′ and the other endside thereof is disposed to be superimposed on the connection region 21c′.

The six electrodes 29′ described above are disposed in each of thep-type transistors pTr1, pTr2, and pTr3. That is, in each of the p-typetransistors pTr1, pTr2, and pTr3, two counter electrodes 29′ are formedso that one ends thereof are superimposed on both ends in the extensiondirection of each gate electrode 25′. Further, in each of the p-typetransistors pTr1, pTr2, and pTr3, two electrodes 29′ are disposed suchthat one ends thereof are superimposed on portions of the active region21 a′ on each of both flanks of the gate electrode 25′, that is, thesource and drain S/D′, in other words, a total of four electrodes 29′are disposed. Thus, a total of six electrodes 29′ are disposed in eachof the p-type transistors pTr1, pTr2, and pTr3. However, the p-typetransistor pTr2 disposed in the middle shares the source and drain S/D′with the p-type transistors pTr1 and pTr3 on both sides. Therefore, atotal of fourteen electrodes 29′ are disposed in the three p-typetransistors pTr1, pTr2, and pTr3.

These electrodes 29′ have a constant planar shape and are arrangedregularly at constant intervals in the arrangement direction of the gateelectrodes 25′.

Each of the above-described electrodes 29′ is configured as an embeddedelectrode that is embedded in the insulation film 27′, is disposed tohave the same height as the one main surface of the insulation film 27′,and is formed of, for example, copper (Cu).

[Contacts 31′]

The contacts 31′ are formed to penetrate through the insulation film27′. The contacts 31′ are selectively formed in portions according tonecessity among portions that connect the gate electrodes 25′ and thesource and drain S/D′ to the electrodes 29′ in the p-type transistorspTr1, pTr2, and pTr3. Further, the contacts 31′ are selectivelyconnected to the connection regions 21′c using these connection regionsas electrode pads. That is, the contacts 31′ are also selectively formedin portions according to necessity among portions that connect theconnection regions 21 c′ to the electrodes 29′.

Of the portions, the portions that connect the gate electrodes 25′ tothe electrodes 29′ refer to six portions in which the gate electrodes25′ and the electrodes 29′ are disposed to be superimposed on each otherin the element isolation region 21 b′ on the outside of the activeregion 21 a′. Further, the portions that connect the source and drainS/D′ to the electrodes 29′ refer to eight portions in which the activeregion 21 a′ and the electrodes 29′ are disposed to be superimposed oneach other without intervention of the gate electrodes 25′. Further, theportions that connect the connection regions 21 c′ to the electrodes 29′refer to fourteen portions in which the connection regions 21 c′ and theelectrodes 29′ are disposed to be superimposed on each other.

Of the portions, the contacts 31′ penetrating through the insulationfilm 27′ are selectively formed in the portions necessary according to acircuit formed using these p-type transistors pTr1, pTr2, and pTr3. Thatis, the connection states between the p-type transistors pTr1, pTr2, andpTr3 and the connection regions 21 c′, and the electrodes 29′ areselected by selection of the positions of the portions in which thecontacts 31′ are formed among the above-described portions. Further, theconnection states between the p-type transistors pTr1, pTr2, and pTr3and the connection regions 21 c′ via the electrodes 29′ are selected byselection of the positions at which the contacts 31′ are formed.

For example, in the present semiconductor device 1, the NAND circuit isformed using two p-type transistors pTr1 and pTr2, and thus thepositions at which the contacts 31′ are formed are selected as follows.

First, referring to FIGS. 3, 4, and 5, the contacts 31′ are formed inthe selected portions so that the gate electrodes 25′ of the p-typetransistors pTr1 and pTr2 are connected to the gate electrodes 25 of then-type transistors nTr1 and nTr2 disposed to face each other.

Further, referring to FIGS. 3 and 6 to 8, the contacts 31′ are formed inthe selected portions so that the sources and drains S/D in the n-typetransistors nTr1 and nTr2 of the first element layer 10-1 areindividually connected to the connection regions 21 c′.

<Wiring Layer 11>

The wiring layer 11 is formed on the top of the second element layer10-2. This wiring layer 11 has a configuration in which an upperinsulation film 35 (illustrated only in the sectional views), uppercontacts 37, and wirings 39 are disposed in this order from the side ofthe second element layer 10-2. The details of each constituent elementare as follows.

[Upper Insulation Film 35]

The upper insulation film 35 is a layer that is formed to come intocontact with the second element layer 10-2 and is formed on an oppositeside to the insulation film 27′ with the semiconductor layer 21′ of thesecond element layer 10-2 interposed therebetween. The upper insulationfilm 35 is configured to have a lamination structure in which a firstlayer 35 a formed using the same high dielectric film as that used inthe gate insulation film 23′ and a second layer 35 b havingprotective-film characteristics of the upper layer are laminated inorder from the side of the semiconductor layer 21′.

[Upper Contacts 37]

The upper contacts 37 are formed to penetrate through the upperinsulation film 35. The upper contacts 37 are selectively formed inportions according to necessity among portions connected to theconnection regions 21 c′ or the sources and drains S/D′ of the activeregion 21 a′ in the second element layer 10-2. Here, for example, theupper contacts 37 are selectively formed at positions serving asterminals of the NAND circuit and positions serving as terminalsconnecting elements included in the NAND circuit.

[Wirings 39]

The wirings 39 are formed on one main surface side of the upperinsulation film 35 so that these wirings are connected to the uppercontacts 37. These wirings 39 are formed as a Vdd terminal, a Vssterminal, a Vg1 terminal, and a Vg2 terminal in the NAND circuit and asconnection wirings between the sources and drains S/D of the p-typetransistors pTr1 and pTr2, so that the NAND circuit is formed.

<Advantages of Structure According to First Embodiment>

In the semiconductor device 1 having the above-described configuration,the connection regions 21 c′ obtained by metalizing parts of the samesemiconductor layer 21′ as the active region 21 a′ are used as electrodepads. Therefore, potentials of respective portions of the p-typetransistors pTr1, pTr2, and pTr3 can be extracted to the connectionregions 21 c′ by selectively disposing the contacts 31′ between theconnection regions 21 c′ and the electrodes 29′ and between the p-typetransistors pTr1, pTr2, and pTr3 and the electrodes 29′. Further, sincethe counter electrodes 29 connected to the portions of the n-typetransistors nTr1, nTr2, and nTr3 are joined with the electrodes 29′, thepotentials of the respective portions of the n-type transistors nTr1,nTr2, and nTr3 can be extracted to these connection regions 21 c′ viathese counter electrodes 29 and these electrodes 29′.

As described above, a desired circuit can be formed by the selection ofthe disposition of the contacts 31′ without depending on only routing ofthe counter electrodes 29, the electrodes 29′, and the wirings 39. As aresult, miniaturization of the semiconductor device can be achieved.

Here, FIGS. 10 to 12 illustrate selective disposition examples of thecontacts 31 and 31′ in the semiconductor device 1.

FIG. 10 is a sectional view taken along the line A-A′ and illustrating aconnection configuration example of the portions of the gate electrodes25 and 25′ in the semiconductor device 1 according to the firstembodiment. In the semiconductor device 1 according to the firstembodiment, as illustrated in the drawing, the gate electrodes 25 of thefirst element layer 10-1 and the gate electrodes 25′ of the secondelement layer 10-2 can be individually extracted up to the wirings 39 bythe selection of the disposition of the contacts 31 and 31′.

Further, FIG. 11 is a sectional view taken along the line B-B′ andillustrating connection configuration example-1 of the portions of thesources and drains S/D and S/D′ in the semiconductor device 1 accordingto the first embodiment. In the semiconductor device 1 according to thefirst embodiment, as illustrated in the drawing, the sources and drainsS/D of the first element layer 10-1 can be individually extracted to twowirings 39 by the selection of the disposition of the contacts 31 and31′.

Furthermore, FIG. 12 is a sectional view taken along the line B-B′ andillustrating connection configuration example-2 of the portions of thesources and drains S/D and S/D′ in the semiconductor device 1 accordingto the first embodiment. In the semiconductor device 1 according to thefirst embodiment, as illustrated in the drawing, the sources and drainsS/D of the first element layer 10-1 and the sources and drains S/D′ ofthe second element layer 10-2 can be individually extracted up to thewirings 39 by the selection of the disposition of the contacts 31, 31′,and 37. Although not illustrated here, the sources and drains S/D′ ofthe second element layer 10-2 can also be extracted to three wirings 39by the selection of the disposition of the contacts 31, 31′, and 37.

Thus, in the present first embodiment, the cases in which the NANDcircuit is formed by the selection of the disposition of the contacts31, 31′, and 37 have been exemplified. However, application of thepresent first embodiment is not limited thereto. Digital circuits calledstandard cells such as, first, NOR and INVERTER, and flip-flop may, ofcourse, be formed with basic 2-dimensional and 3-dimensional structures.An embodiment of the present technology is not limited to the digitalcircuits, but may be applied to analog circuits as well. The same alsoapplies to embodiments to be described below.

<1-(2) Manufacturing Method>

Next, a method of manufacturing the semiconductor device according tothe first embodiment will be described in detail with reference to thedrawings. Here, the description will be made in the order of <process ofmanufacturing first element layer 10-1>, <process of manufacturingsecond element layer 10-2>, and <lamination process>.

<Process of Manufacturing First Element Layer 10-1>

FIGS. 13 to 15 are diagrams illustrating manufacturing processes todescribe processes of manufacturing the first element layer 10-1, andare plan views illustrating one main surface side of the semiconductorsubstrate 21 and sectional views taken along the lines B1-B1′ and A1-A1′of the plan views. As illustrated in these drawings, the first elementlayer 10-1 is manufactured as follows.

First, as illustrated in FIG. 13, which is a diagram (part 1)illustrating the manufacturing process, the groove-shaped elementisolation region 21 b is formed on the one main surface side of thesemiconductor substrate 21 so as to surround the active region 21 a. Then-type source and drain S/D is formed in the active region 21 a, thegate insulation film 23 is formed to cover the semiconductor substrate21, and then the gate electrodes 25 are formed on the top of this gateinsulation film. When the substrate is changed to the semiconductorsubstrate 21 and an SOI substrate is used, the active region 21 a andthe element isolation region 21 b are formed in the thin-filmsemiconductor layer.

Next, as illustrated in FIG. 14, which is a diagram (part 2)illustrating the manufacturing process, the laminated insulation film 27(illustrated only in the sectional views) is formed on the one mainsurface side of the semiconductor substrate 21 so as to cover the gateelectrodes 25. Subsequently, the contacts 31 penetrating through thelaminated insulation film 27 and reaching the gate electrodes 25 and thesource and drain S/D are formed in the portions selected according tonecessity.

Thereafter, as illustrated in FIG. 15 which is a diagram (part 3)illustrating the manufacturing process, the laminated insulation film 27is further accumulated, and then the counter electrodes 29 of whichparts are connected to the contacts 31 are formed by applying anembedded-electrode process (a so-called damascene process) to theaccumulated laminated insulation film 27. At this time, grooves areformed in the laminated insulation film 27, electrode material films areformed to be embedded in the grooves, and the electrode material filmson the laminated insulation film 27 are removed such that the electrodematerial films remain only in the grooves, and the remaining electrodematerial films are formed as the counter electrodes 29.

As described above, the above-described first element layer 10-1 can beobtained. The processing order is not particularly limited except thatthe contacts 31 are formed only in the portions selected from the presetportions and the counter electrodes 29 are formed in a constant shapewhile constant intervals are maintained, and the manufacturing of theabove-described first element layer 10-1 is performed in a normal order.For example, a dual damascene process may be applied when the contacts31 and the counter electrodes 29 are formed.

<Process of Manufacturing Second Element Layer 10-2>

FIGS. 16 to 18 are diagrams illustrating manufacturing processes todescribe processes of manufacturing the second element layer 10-2 andare plan views illustrating one main surface side of the semiconductorlayer 21′ and sectional views taken along the lines B1′-B1 and A1′-A1 ofthe plan views. As illustrated in these drawings, the second elementlayer 10-2 is manufactured as follows.

First, as illustrated in FIG. 16, which is a diagram (part 1)illustrating the manufacturing process, the groove-shaped elementisolation region 21 b′ is formed on the one main surface side of asemiconductor substrate 20 so as to surround the active region 21 a′ andthe connection regions 21 c′. At this time, the connection regions 21 c′with an island shape independent from the active region 21 a′ are formedby the element isolation region 21 b′. The n-type source and drain S/D′is formed in the active region 21 a′. At this time, in the same processas the process of forming the source and drain S/D′, the connectionregions 21 c′ with the island shape independent from the active region21 a′ are metalized. Further, after the gate insulation film 23′(illustrated only in the sectional views) is formed so that thesemiconductor substrate 20 is covered, the gate electrodes 25′ areformed on the top of this gate insulation film.

The substrate may be changed to the semiconductor substrate 20 and anSOI substrate may be used. In this case, the active region 21 a′, theelement isolation region 21 b′, the connection regions 21 c′, and thesource and drain S/D′ are formed in the thin-film semiconductor layer,and the gate insulation film 23′ and the gate electrodes 25′ are formedon the top of the active region, the element isolation region, and theconnection regions.

Next, as illustrated in FIG. 17, which is a diagram (part 2)illustrating the manufacturing process, the insulation film 27′(illustrated only in the sectional views) is formed on the one mainsurface side of the semiconductor substrate 20 so as to cover the gateelectrodes 25′. Subsequently, the contacts 31′ penetrating through theinsulation film 27′ and reaching the gate electrodes 25′ and the sourceand drain S/D′ are formed in the portions selected according tonecessity.

Thereafter, as illustrated in FIG. 18, which is a diagram (part 3)illustrating the manufacturing process, the insulation film 27′ isfurther accumulated, and then the electrodes 29′ are formed by applyingan embedded-electrode process (a so-called damascene process) to thisinsulation film 27′. At this time, grooves are formed in the insulationfilm 27′, electrode material films are formed to be embedded in thegrooves, and the electrode material films on the insulation film 27′ areremoved such that the electrode material films remain only in thegrooves, and the remaining electrode material films are formed as thecounter electrodes 29. In particular, here, it is important to form theelectrodes 29′ with a constant shape in correspondence with the counterelectrodes of the first element layer described above, while constantintervals are maintained.

As described above, the above-described second element layer 10-2 can beobtained. The manufacturing of the above-described second element layer10-2 is performed in a normal order except that the connection regions21 c′ are formed, the contacts 31′ are formed only in the portionselected from the preset portions, and the electrodes 29′ are formed ina constant shape while constant intervals are maintained.

For example, a dual damascene process may be applied when the contacts31′ and the electrodes 29′ are formed.

<Lamination Process>

FIGS. 19 to 21 are diagrams illustrating a laminating process todescribe the process of laminating the first element layer 10-1 and thesecond element layer 10-2 and correspond to the sectional views takenalong the line A1-A1′ of the above-described plan views. As illustratedin the drawings, the process of laminating the first element layer 10-1and the second element layer 10-2 is performed as follows.

First, as illustrated in FIG. 19, which is a diagram (part 1)illustrating the laminating process, the first element layer 10-1 andthe second element layer 10-2 are disposed to face each other so thatthe counter electrodes 29 of the first element layer 10-1 face theelectrodes 29′ of the second element layer 10-2. At this time, the firstelement layer 10-1 and the second element layer 10-2 are adjusted sothat the counter electrodes 29 and the electrodes 29′ correspond to eachother in a one-to-one manner. In this state, the counter electrodes 29of the first element layer 10-1 are joined with the electrodes 29′ ofthe second element layer 10-2. Further, the first element layer 10-1 isbonded to the second element layer 10-2 by joining the laminatedinsulation film 27 of the first element layer 10-1 with the insulationfilm 27′ of the second element layer 10-2.

In the bonding, heat of about 400° C. is applied and inter-metal joining(for example, Cu-to-Cu) is performed between the counter electrodes 29and the electrodes 29′. Further, in the joining between the laminatedinsulation film 27 and the insulation film 27′, plasma joining or thelike is applied using dehydration and condensation.

On the bonded surfaces, the counter electrodes 29 and the electrodes 29′correspond to each other in the one-to-one manner in the same dimensionsand the same shape. However, the dimensions of the bonded portionsbetween the counter electrodes 29 and the electrodes 29′ may, of course,be set to be large or small according to processing variation accuracyat the time of forming the respective electrodes and alignment accuracyof the alignment at the time of the bonding. The same also applies toembodiments to be described below.

Next, as illustrated in FIG. 20, which is a diagram (part 2)illustrating the laminating process, the semiconductor substrate 20 ofthe second element layer 10-2 is cut until the connection regions 21 c′are exposed from the exposed surface side, so that the semiconductorlayer 21′ obtained by thinning the semiconductor substrate 20 on theside of the second element layer 10-2 is formed. At this time, when thesubstrate is changed to the semiconductor substrate 20 and the SOIsubstrate is used, only the thin-film semiconductor layer may remain bypeeling an insulation substrate portion in the SOI substrate.

Thereafter, as illustrated in FIG. 21, which is a diagram (part 3)illustrating the laminating process, the wiring layer 11 is formed onthe semiconductor layer 21′ of the second element layer 10-2. In thiscase, the upper insulation film 35 with the lamination structure isformed by forming the first layer 35 a formed of the same highdielectric film as the gate insulation film 23′ and the second layer 35b having the protective-film characteristics of the upper layer inorder. Next, the upper contacts 37 penetrating through the upperinsulation film 35 and reaching the connection regions 21 c′ and thesource and drain S/D′ (not illustrated here) are formed in portionsselected according to necessity.

Further, the semiconductor device 1 is completed by forming the wirings39 connected to the upper contacts 37 on the upper insulation film 35.

<Advantages of Manufacturing Method According to First Embodiment>

According to the above-described manufacturing method, the semiconductordevice 1 with the above-described configuration can be manufactured.Since the counter electrodes 29 of the first element layer 10-1 and theelectrodes 29′ of the second element layer 10-2 are formed in theconstant shapes while the constant intervals are maintained, it ispossible to form the counter electrodes 29 and the electrodes 29′ ofwhich heights are constantly maintained. For example, when theembedded-electrode process is applied to form these counter electrodes29 and these electrodes 29′, the removal film thickness of the electrodematerial film can be prevented from varying, and thus the counterelectrodes 29 and the electrodes 29′ of which the heights are constantlymaintained are formed. As a result, when the first element layer 10-1and the second element layer 10-2 are laminated to be bonded, adhesioncan be improved, and thus the joining strength of the first elementlayer 10-1 and the second element layer 10-2 can be ensured.

<<Second Embodiment>> [Example Lamination Structure of 3 or more Layers]

2-(1) Structure

FIG. 22 is a plan view illustrating a schematic configuration of asemiconductor device according to a second embodiment. FIG. 23 is asectional view taken along the line A-A1′ of FIG. 22. A semiconductordevice 2 of the second embodiment illustrated in the drawings is asemiconductor device having a 3-dimensional structure in which fourelement layers, a first element layer 10-1 to a fourth element layer10-4, are laminated.

The semiconductor device 2 is different from the semiconductor device ofthe first embodiment in that the third element layer 10-3 and the fourthelement layer 10-4 are laminated above the second element layer 10-2 viaintermediate layers 13-1 and 13-2 (illustrated only in the sectionalview). Therefore, the lamination is configured such that the secondelement layer 10-2, the intermediate layer 13-1, the third element layer10-3, the intermediate layer 13-2, the fourth element layer 10-4, and awiring layer 11 are laminated in this order on the top of the firstelement layer 10-1.

Hereinafter, the constituent elements will be described in detail inorder from the side of the first element layer 10-1. The same referencenumerals are given to the same constituent elements as those of thefirst embodiment, and the repeated description will be omitted.

<First Element Layer 10-1 and Second Element Layer 10-2>

The first element layer 10-1 and the second element layer 10-2 have thesame configurations as those described in the first embodiment and arelaminated in the same manner as those described in the first embodiment.

<Intermediate Layer 13-1>

The intermediate layer 13-1 is disposed between the second element layer10-2 and the third element layer 10-3. The intermediate layer 13-1 has aconfiguration in which an intermediate insulation film 41, intermediatecontacts 43, and intermediate electrodes 45 are disposed from the sideof the second element layer 10-2. The details of each constituentelement are as follows.

[Intermediate Insulation Film 41]

The intermediate insulation film 41 is a layer in which the secondelement layer 10-2 is formed to come into contact with the third elementlayer 10-3 and is formed to cover the semiconductor layer 21′ in thesecond element layer 10-2. The intermediate insulation film 41 isconfigured with a lamination structure in which a first layer 41 aformed of the same high dielectric film as the gate insulation film 23′and a second layer 41 b having an inter-layer insulation property of theupper layer are laminated in order from the side of the semiconductorlayer 21′ of the second element layer 10-2.

[Intermediate Contacts 43]

The intermediate contacts 43 are formed to penetrate through theintermediate insulation film 41. The intermediate contacts 43 areselectively formed in portions according to necessity among portionsconnected to connection regions 21 c′ and a source and drain S/D′ of anactive region 21 a′ (not illustrated here) in the second element layer10-2.

[Intermediate Electrodes 45]

The intermediate electrodes 45 are electrodes that are disposed to facethe electrodes 29′ formed in the third element layer 10-3 to bedescribed below and are formed on one main surface side of theintermediate insulation film 41 in a one-to-one joining state with theelectrodes 29′. The shape and the disposition state of the intermediateelectrodes 45 may be the same as the shape and the disposition state ofthe counter electrodes 29 of the first element layer 10-1. That is, theintermediate electrodes 45 have a constant planar shape and are arrangedregularly at constant intervals in the arrangement direction of the gateelectrodes 25.

The above-described intermediate electrodes 45 are formed as embeddedelectrodes that are embedded in the intermediate insulation film 41, aredisposed to have the same height as the one main surface of theintermediate insulation film 41, and are formed of, for example, copper(Cu).

<Third Element Layer 10-3>

The third element layer 10-3 is a layer that has the same configurationas the second element layer 10-2 and includes a semiconductor layer 21′,transistors Tr1, Tr2, and Tr3, an insulation film 27′, electrodes 29′,and contacts 31′. This embodiment is characterized by the fact that theconnection regions 21 c′ are formed in the semiconductor layer 21′ andthe contacts 31′ are formed in portions selected according to necessity.However, the transistors Tr1, Tr2, and Tr3 included in the third elementlayer 10-3 may not necessarily be the same conductive type as the secondelement layer 10-2, and may be n-type or p-type transistors. In thiscase, a material of each of the constituent elements included in thethird element layer 10-3 is assumed to be appropriately selected.

In the third element layer 10-3, the electrodes 29′ are disposed on onemain surface side of the intermediate layer 13-1 in a one-to-one joiningstate with the intermediate electrodes 45 of the intermediate layer13-1.

<Intermediate Layer 13-2>

The intermediate layer 13-2 is disposed between the third element layer10-3 and the fourth element layer 10-4. The intermediate layer 13-2 hasthe same configuration as the above-described intermediate layer 13-1and a configuration in which an intermediate insulation film 41,intermediate contacts 43, and intermediate electrodes 45 are disposedfrom the side of the third element layer 10-3.

<Fourth Element Layer 10-4>

The fourth element layer 10-4 has the same configuration as the secondelement layer 10-2 and includes a semiconductor layer 21′, transistorsTr1, Tr2, and Tr3, an insulation film 27′, electrodes 29′, and contacts31′. This embodiment is characterized by the fact that the connectionregions 21 c′ are formed in the semiconductor layer 21′ and the contacts31′ are formed in portions selected according to necessity. However, thetransistors Tr1, Tr2, and Tr3 included in the fourth element layer 10-4may not necessarily be the same conductive type as the second elementlayer 10-2, and may be n-type or p-type transistors. In this case, amaterial of each of the constituent elements included in the fourthelement layer 10-4 is assumed to be appropriately selected.

In the fourth element layer 10-4, the electrodes 29′ are disposed on onemain surface side of the intermediate layer 13-2 in a one-to-one joiningstate with the intermediate electrodes 45 of the intermediate layer13-2.

<Wiring Layer 11>

The wiring layer 11 has the same configuration as that described in thefirst embodiment and is laminated in the same manner as that describedin the first embodiment. However, here, the wiring layer is disposed onthe top of the fourth element layer 10-4.

In the semiconductor device 2 having the above-described configuration,the insulation films 27′ and 41, the electrodes 29′ and 45, and thecontacts 31′ and 43 are formed on both surfaces of each of thesemiconductor layers 21′ included in the second element layer 10-2 andthe third element layer 10-3.

<Advantages of Structure According to Second Embodiment>

In the semiconductor device 2 having the above-described configuration,the connection regions 21 c′ obtained by metalizing parts of the samesemiconductor layer 21′ as the active region 21 a′ are also used aselectrode pads in each of the element layers 10-1 to 10-4. Therefore, inthe lamination structure of a plurality of element layers such as threeor more element layers, potentials of the portions of the transistors ofeach layer can be also extracted up to the connection regions 21 c′ ofthe uppermost layer (the fourth element layer 10-4), as in the firstembodiment. As a result, a desired circuit can be formed by theselection of the disposition of the contacts 31′ without depending ononly routing of the counter electrodes 29, the electrodes 29′, and thewirings 39 of the element layers 10-1 to 10-4. As a result,miniaturization of the semiconductor device can be achieved.

<2-(2) Manufacturing Method>

Next, a method of manufacturing the semiconductor device according tothe second embodiment will be described in detail with reference toFIGS. 24 to 31, which are diagrams illustrating laminating processes.

First, as illustrated in FIG. 24, which is a diagram (part 1)illustrating a laminating process, the first element layer 10-1 and thesecond element layer 10-2 are laminated in an aligned state. Next, asillustrated in FIG. 25, which is a diagram (part 2) illustrating alaminating process, the semiconductor layer 21′ obtained by thinning thesemiconductor substrate 20 of the second element layer 10-2 is formed.The above-described processes are performed as in the manufacturing ofthe semiconductor device according to the first embodiment.

Next, as illustrated in FIG. 26, which is a diagram (part 3)illustrating a laminating process, the first layer 41 a formed from thesame high dielectric film as the gate insulation film 23′ and the secondlayer 41 b having the inter-layer insulation property of the upper layerand formed on the top of this first layer are formed in order on thesemiconductor layer 21′ of the second element layer 10-2, so that theintermediate insulation film 41 with the lamination structure is formed.Next, the intermediate contacts 43 penetrating through the intermediateinsulation film 41 and reaching the connection regions 21 c′ and thesource and drain S/D′ (not illustrated here) are formed in the portionsselected according to necessity.

Then, the second layer 41 b is accumulated to be formed, and then theintermediate electrodes 45 are formed by applying an embedded-electrodeprocess (a so-called damascene process) to this second layer 41 b. Inparticular, here, it is important to form the intermediate electrodes 45with the constant shape while the constant intervals are maintained.

As described above, the above-described intermediate layer 13-1 can beobtained. The processing order is not particularly limited except thatthe intermediate contacts 43 are formed only in the portions selectedfrom the preset portions and the intermediate electrodes 45 are formedin the constant shape while the constant intervals are maintained, andthe forming of the above-described intermediate layer 13-1 is performedin a normal order. For example, a dual damascene process may be appliedwhen the intermediate contacts 43 and the intermediate electrodes 45 areformed.

Thereafter, as illustrated in FIG. 27, which is a diagram (part 4)illustrating a laminating process, the third element layer 10-3 islaminated on the surface in which the intermediate electrodes 45 areformed in the intermediate layer 13-1. The process of manufacturing thethird element layer 10-3 is performed as in the process of manufacturingthe second element layer 10-2 described in the first embodiment. Thelaminating of the third element layer 10-3 on the intermediate layer13-1 is performed as in the laminating of the second element layer 10-2on the first element layer 10-1 described in the first embodiment, sothat the intermediate electrodes 45 of the intermediate layer 13-1 andthe electrodes 29′ of the third element layer 10-3 are joined in aone-to-one manner.

Next, as illustrated in FIG. 28, which is a diagram (part 5)illustrating a laminating process, the semiconductor substrate 20 of thethird element layer 10-3 is cut until the connection regions 21 c′ areexposed from the exposed surface side, so that the semiconductor layer21′ obtained by thinning the semiconductor substrate 20 on the side ofthe third element layer 10-3 is formed.

Further, as illustrated in FIG. 29 which is a diagram (part 6)illustrating a laminating process, the intermediate layer 13-2 is formedon the semiconductor layer 21′ of the third element layer 10-3. Theforming of the intermediate layer 13-2 is performed as in the forming ofthe intermediate layer 13-1 described above with reference to FIG. 26.

Thereafter, as illustrated in FIG. 30, which is a diagram (part 7)illustrating a laminating process, the fourth element layer 10-4 islaminated on the surface in which the intermediate electrodes 45 areformed in the intermediate layer 13-2, as in the third element layer10-3.

Subsequently, as illustrated in FIG. 31, which is a diagram (part 8)illustrating a laminating process, the semiconductor substrate 20 of thefourth element layer 10-4 is cut until the connection regions 21 c′ areexposed from the exposed surface side, so that the semiconductor layer21′ obtained by thinning the semiconductor substrate 20 on the side ofthe fourth element layer 10-4 is formed.

When four or more element layers are laminated, element layers can belaminated by any number of laminations by repeatedly performing theprocesses of FIGS. 29 to 31 as many times as the number of additionalelement layers.

Thereafter, as illustrated in FIG. 23, the semiconductor device 2 iscompleted by forming the wiring layer 11 on the fourth element layer10-4.

<Advantages of Manufacturing Method According to Second Embodiment>

According to the above-described manufacturing method, the semiconductordevice 2 with the above-described configuration can be manufactured.

Since the counter electrodes 29 of the first element layer 10-1, theelectrodes 29′ of the second element layer 10-2 to the fourth elementlayer 10-4, and the intermediate electrodes 45 of the intermediatelayers 13-1 and 13-2 are formed in the constant shapes while theconstant intervals are maintained, it is possible to form the counterelectrodes 29, the electrodes 29′, and the intermediate electrodes 45 ofwhich heights are constantly maintained. As a result, when the firstelement layer 10-1 and the second element layer 10-2, and the elementlayers 10-3 and 10-4 and the intermediate layers 13-1 and 13-2 arelaminated to be bonded, adhesion can be improved, and thus the joiningstrength of these layers can be ensured.

Third Embodiment Example of Lamination Structure Using Support Substrate(Including NAND Circuit) <3-(1) Structure>

FIG. 32 is a plan view illustrating a schematic configuration of asemiconductor device according to a third embodiment. A semiconductordevice 3 of the third embodiment illustrated in the drawing has anotherconfiguration of a semiconductor device having a 3-dimensional structurein which four layers, a first element layer 10-1′ to a fourth elementlayer 10-4, are laminated.

The semiconductor device 3 is different from the semiconductor device ofthe second embodiment in the first element layer 10-1′ to the fourthelement layer 10-4 laminated on the top of a support substrate 15 andthe first element layer 10-1′. The remaining configuration is the sameas that of the semiconductor device of the second embodiment.

Hereinafter, a case in which the detailed configuration of thesemiconductor device 3 is applied to a semiconductor device including aNAND circuit, which is an example of a digital circuit, will beexemplified. Here, the configurations of the support substrate 15 andthe first element layer 10-1′ different from the configurations of thesemiconductor device of the second embodiment will be described withreference to the above-described plan view of FIG. 32 and sectionalviews (FIGS. 33 to 35) of respective portions taken along the linesA1-A1′, B1-B1′, and B2-B2′ of the plan view. FIG. 36 is an equivalentcircuit diagram illustrating a NAND circuit formed in the semiconductordevice 3.

<Support Substrate 15>

The support substrate 15 is a substrate on which the first element layer10-1′ to the fourth element layer 10-4 are mounted. In the supportsubstrate 15, an insulation property of the surface side on which thefirst element layer 10-1′ to the fourth element layer 10-4 are mountedmay be ensured, and a material may not be limited. For example, asubstrate in which a front surface of a semiconductor substrate or ametal substrate is covered with an insulation film may be used.

<First Element Layer 10-1′>

The first element layer 10-1′ is different from the first element layersof the above-described first and second embodiments in that thesubstrate is changed to a semiconductor substrate and a semiconductorlayer 21′ is used, and the first element layer is the same as the secondelement layer 10-2 to the fourth element layer 10-4. That is, the firstelement layer 10-1′ includes the semiconductor layer 21′, n-typetransistors nTr1, nTr2, and nTr3, an insulation film 27′, electrodes29′, and contacts 31′.

This embodiment is characterized in that connection regions 21 c′ areformed in the semiconductor layer 21′, and the contacts 31′ are formedin portions selected according to necessity.

The first element layer 10-1′ is disposed to face the support substrate15 so that the electrodes 29′ are oriented toward the side of thesupport substrate 15.

An intermediate layer 13-1 is disposed between the first element layer10-1′ and the second element layer 10-2. Therefore, the first elementlayer 10-1′, the intermediate layer 13-1, the second element layer 10-2,an intermediate layer 13-2, the third element layer 10-3, anintermediate layer 13-3, the fourth element layer 10-4, and a wiringlayer 11 are formed to be laminated in this order on the top of thesupport substrate 15.

In the semiconductor device 3 having the above-described configuration,as illustrated in sectional views of FIGS. 33 to 35, a NAND circuit inFIG. 36 is formed by disposing contacts 31′, intermediate contacts 43,and upper contacts 37 formed selectively in each layer according tonecessity. Here, n-type transistors nTr are formed in the first elementlayer 10-1′ and the third element layer 10-3, and p-type transistors pTrare formed in the second element layer 10-2 and the fourth element layer10-4.

<Advantages of Configuration According to Third Embodiment>

In the semiconductor device 3 having the above-described configuration,the connection regions 21 c′ obtained by metalizing parts of the samesemiconductor layer 21′ as the active region 21 a′ are also used aselectrode pads in each of the element layers 10-1′ to 10-4. Therefore,in the lamination structure of a plurality of element layers such asthree or more element layers, potentials of the portions of thetransistors of each layer can be also extracted up to the connectionregions 21 c′ of the uppermost layer (the fourth element layer 10-4), asin the first embodiment. As a result, a desired circuit can be formed bythe selection of the disposition of the contacts 31′ and 37 withoutdepending on only routing of the electrodes 29′ and the wirings 39 ofthe element layers 10-1′ to 10-4. As a result, miniaturization of thesemiconductor device can be achieved.

3-(2) Manufacturing Method

Next, a method of manufacturing the semiconductor device according tothe third embodiment will be described in detail with reference to FIGS.37 to 40 which are diagrams illustrating laminating processes.

First, as illustrated in FIG. 37, which is a diagram (part 1)illustrating a laminating process, the first element layer 10-1′ islaminated on one main surface side of the support substrate 15. Here,the support substrate 15 is bonded on the side of the electrodes 29′ ofthe first element layer 10-1′. A process of manufacturing the firstelement layer 10-1′ is performed as in the process of forming the secondelement layer of the first embodiment.

Next, as illustrated in FIG. 38, which is a diagram (part 2)illustrating a laminating process, the connection regions 21 c′ obtainedby thinning a semiconductor substrate 20 of the first element layer10-1′ are exposed, and the semiconductor layer 21′ obtained by thinningthe semiconductor substrate 20 of the second element layer 10-2 isformed.

Next, as illustrated in FIG. 39, which is a diagram (part 3)illustrating a laminating process, the intermediate layer 13-1 is formedon the semiconductor layer 21′ in which the connection regions 21 c′ ofthe first element layer 10-1′ are exposed. The forming of theintermediate layer 13-1 is performed in the same way as described withreference to FIG. 26 in the second embodiment.

Thereafter, as illustrated in FIG. 40, which is a diagram (part 4)illustrating a laminating process, the second element layer 10-2, theintermediate layer 13-2, the third element layer 10-3, the intermediatelayer 13-3, and the fourth element layer 10-4 are laminated on theintermediate layer 13-1 by repeating the same order. Then, thesemiconductor layer 21′ in which the connection regions 21 c′ areexposed by thinning the semiconductor substrate 20 of the fourth elementlayer 10-4 is formed.

After the above-described processes, as illustrated in FIG. 33, thesemiconductor device 3 is completed by forming the wiring layer 11 onthe fourth element layer 10-4.

<Advantages of Manufacturing Method According to Third Embodiment>

According to the above-described manufacturing method, the semiconductordevice 3 with the above-described configuration can be manufactured.Since the electrodes 29′ of the first element layer 10-1′ to the fourthelement layer 10-4 and the intermediate electrodes 45 of theintermediate layers 13-1, 13-2, and 13-3 are formed in the constantshapes while the constant intervals are maintained, it is possible toform the electrodes 29′ and the intermediate electrodes 45 of whichheights are constantly maintained. As a result, when the element layers10-2 to 10-4 and the intermediate layers 13-1 to 13-3 are laminated tobe bonded, adhesion can be improved, and thus the joining strength ofthese layers can be ensured.

Fourth Embodiment Example of Lamination Structure Applied to Solid-StateImaging Device

FIG. 41 is a sectional view illustrating a solid-state imaging deviceaccording to a fourth embodiment to which the present technology isapplied. A solid-state imaging device 4 illustrated in the drawing has aconfiguration in which a plurality of element layers 10-1′ to 10-3 arelaminated on an imaging substrate 50. As the lamination structure of theelement layers 10-1′ to 10-3, a case to which the lamination structureof the third embodiment is applied as an example is illustrated.Therefore, the description of the lamination structure of the elementlayers 10-1′ to 10-3 is omitted and the configuration of the imagingsubstrate 50 will be described.

<Imaging Substrate 50>

The imaging substrate 50 includes, for example, a semiconductorsubstrate 51 which includes a photoelectric conversion unit 53configured as an impurity region and a floating diffusion 55 therein. Atransfer transistor 57, other transistors (not illustrated here), and awiring (not illustrated here) are formed on one main surface which is anopposite side to a light-reception surface of the semiconductorsubstrate 51, and the transfer transistor, the other transistors, andthe wirings are covered with an insulation film 59. On the other hand, amicrolens 61 configured to condense light to the photoelectricconversion unit 53 is formed on the side of the light-reception surfaceof the semiconductor substrate 51.

A laminate is configured such that the first element layer 10-1′, theintermediate layer 13-1, . . . , and the wiring layer 11 described aboveare laminated in this order on the side of the insulation film 59 of theimaging substrate 50 with such a configuration. For example, a drivingcircuit for imaging is configured by such a laminate. The laminationstructure is not limited to the lamination structure of the thirdembodiment, but the lamination structure of the first embodiment or thelamination structure of the second embodiment may be applied.

Although not illustrated here, the driving circuit is assumed to beconnected to the electrodes 29′ of the first element layer 10-1′ bycontacts formed to penetrate through the insulation film 59 of theimaging substrate 50.

<Advantages of Structure According to Fourth Embodiment>

The solid-state imaging device 4 has such a lamination configuration inwhich the imaging substrate 50 is used as the support substrate and thefirst element layer 10-1′, the intermediate layer 13-1, . . . , and thewiring layer 11 with the above-described configurations are laminated onthe top of the imaging substrate. Accordingly, since miniaturization ofsuch a laminate in which the driving circuit and the like are formed canbe achieved, miniaturization of the solid-state imaging device 4 havingthe laminate (semiconductor device) is realized.

Fifth Embodiment Example of Lamination Structure Applied to FINStructure 5-(1) Structure

FIG. 42 is a plan view illustrating a schematic configuration of asemiconductor device according to a fifth embodiment. A semiconductordevice 5 of the fifth embodiment illustrated in the drawing is anexample in which the present technology is applied to a configurationincluding a semiconductor device of a FIN structure and is asemiconductor element that has a 3-dimensional structure in which afirst element layer 50-1 and a second element layer 50-2 includingsemiconductor elements of the FIN structure are laminated. FIG. 43 is aplan view illustrating an element-formed surface side of the firstelement layer 50-1. FIG. 44 is a plan view illustrating anelement-formed surface side of the second element layer 50-2. The firstelement layer 50-1 and the second element layer 50-2 illustrated inthese drawings are bonded to each other so that surfaces on whichsemiconductor elements are formed face each other, and are characterizedby the connection state of the semiconductor elements between the firstelement layer 50-1 and the second element layer 50-2.

Hereinafter, the detailed configuration of the semiconductor device 5will be described with reference to the above-described plan views ofFIGS. 42 to 44 and sectional views (FIGS. 45 to 48) of portions takenalong the lines A-A′, B-B′, C1-C1′, and C2-C2′ of these plan views. Thedescription will be made in the order of <first element layer 50-1>,<second element layer 50-2>, and <wiring layer 11>formed on an outsideof a laminate of the element layers. The same reference numerals aregiven to the same constituent elements as those of the above-describedembodiments and the repeated description will be omitted.

<First Element Layer 50-1>

The first element layer 50-1 illustrated in the plan views of FIGS. 42and 43 and the sectional views of FIGS. 45 to 48 includes n-typetransistors nTr1 and nTr2 on one main surface of the support substrate15. A laminated insulation film 27 (illustrated only in the sectionalviews) covering such n-type transistors nTr1 and nTr2 and counterelectrodes 29 are formed in this order on the one main surface side ofthe support substrate 15, and contacts 31 are also formed to penetratethrough the laminated insulation film 27. The details of theseconstituent elements are as follows.

[Support Substrate 15]

The support substrate 15 is a substrate on which the n-type transistorsnTr1 and nTr2 are mounted. In the support substrate 15, an insulationproperty of the surface side on which n-type transistors nTr1 and nTr2are mounted may be ensured, and a material may not necessarily belimited. For example, a substrate in which a front surface of asemiconductor substrate or a metal substrate is covered with aninsulation film may be used.

[N-type Transistors nTr1 and nTr2]

The n-type transistors nTr1 and nTr2 are elements that are formed usinga plurality of active regions 71 a obtained by patterning asemiconductor layer. Each of these n-type transistors nTr1 and nTr2includes a gate insulation film 23 (illustrated only in the sectionalview) covering the active region 71 a and a gate electrode 25 disposedto traverse the active regions 71 a via this gate insulation film.Therefore, these n-type transistors nTr1 and nTr2 are configured astri-gate type transistors in which channels are formed on three surfacesof the active regions 71 a which the gate electrodes 25 are disposed toface.

Here, the gate insulation film 23, the gate electrode 25, and thesemiconductor layer forming the active regions 71 a are formed usingmaterials suitable for the n-type transistor, as in the otherembodiments.

In each of the n-type transistors nTr1 and nTr2, the active region 71 ainterleaved with the gate electrode 25 and located at both sides thereofis configured as a source and drain S/D (see FIGS. 43 to 47), and thesource and drain S/D is configured to be shared by the adjacenttransistors. This source and drain S/D is an n-type region and may bemetalized. The active region 71 a superimposed on the gate electrode 25is a portion serving as a channel region and remaining as a region whichdoes not become the n-type region, is not metalized, and thus remains asa region in which semiconductor characteristics are maintained.

Source and drain electrodes 69 disposed in parallel to the gateelectrodes 25 are connected to each source and drain S/D. These sourceand drain electrodes 69 are electrodes that are formed of a metalmaterial and have satisfactory conductivity.

FIG. 45 is a sectional view taken in the extension direction of the gateelectrode 25 in the n-type transistor nTr1. As illustrated in thedrawing, each gate electrode 25 is assumed to be extracted with asufficient length up to a position deviated from the active region 71 aso that contact with this gate electrode 25 is achieved at a positionnot superimposed on the active region 71 a.

The semiconductor layer forming the above-described active region 71 amay be a layer formed as a front surface layer of a semiconductorsubstrate when the support substrate 15 is configured as thesemiconductor substrate. In this case, the front surface layer(semiconductor layer) of the semiconductor substrate may be formed to bepatterned as a convex active region 71 a and the front surface of thesemiconductor substrate on the bottom of the active region 71 a may beformed to be covered with an insulation film.

[Laminated Insulation Film 27]

The laminated insulation film 27 is formed to embed the n-typetransistors nTr1 and nTr2 on the one main surface side of the supportsubstrate 15 and is formed as a planarized insulation film with a planarsurface. The laminated insulation film 27 is formed to be joined with aninsulation film 27′ of the second element layer 50-2 to be describedbelow.

[Counter Electrodes 29]

The counter electrodes 29 are the same as those of the first embodiment.The counter electrodes are arranged regularly at constant intervals andare configured as embedded electrodes that are embedded in the laminatedinsulation film 27.

[Contacts 31]

The contacts 31 are the same as those of the first embodiment. Thecontacts are formed selectively in portions necessary according to acircuit formed using the n-type transistors nTr1 and nTr2 to penetratethrough the laminated insulation film 27. However, the contacts 31 comeinto contact with the sources and drains S/D via the source and drainelectrodes 69.

<Second Element Layer 50-2>

The second element layer 50-2 illustrated in the plan views of FIGS. 42and 44 and the sectional views of FIGS. 45 to 48 includes p-typetransistors pTr1 and pTr2 on one main surface of the wiring layer 11. Alaminated insulation film 27′ (illustrated only in the sectional views)covering these p-type transistors pTr1 and pTr2 and electrodes 29′ areformed in this order on the one main surface side of the wiring layer11, and contacts 31′ are also formed to penetrate through the insulationfilm 27′.

In particular, this embodiment is characterized by the fact thatconnection regions 71 c′ are included on the outside of the p-typetransistors pTr1 and pTr2, which is different from the first elementlayer 50-1. Hereinafter, these constituent elements will be described indetail.

[P-type Transistors pTr1 and pTr2]

The p-type transistors pTr1 and pTr2 are elements that are formed usinga plurality of active regions 71 a′ obtained by patterning asemiconductor layer. Each of these p-type transistors pTr1 and pTr2includes a gate insulation film 23′ (illustrated only in the sectionalview) covering the active region 71 a′ and a gate electrode 25′ disposedto traverse the active regions 71 a′ via this gate insulation film.Therefore, these p-type transistors pTr1 and pTr2 are formed as tri-gatetype transistors in which channels are formed on three surfaces of theactive regions 71 a′ which the gate electrodes 25′ are disposed to face.

Here, the gate insulation film 23′, the gate electrode 25′, and thesemiconductor layer forming the active regions 71 a′ are formed usingmaterials suitable for the p-type transistor, as in the otherembodiments.

In each of the p-type transistors pTr1 and pTr2, the active region 71 ainterleaved with the gate electrode 25′ and located at both sidesthereof is configured as a source and drain S/D′, and the source anddrain S/D′ is configured to be shared by the adjacent transistors. Thissource and drain S/D′ is an p-type region and may be metalized. Theactive region 71 a′ superimposed on the gate electrode 25′ is a portionserving as a channel region and remaining as a region which does notbecome the p-type region, is not metalized, and thus remains as a regionin which semiconductor characteristics are maintained.

Source and drain electrodes 69′ disposed in parallel to the gateelectrodes 25′ are connected to each source and drain S/D′. These sourceand drain electrodes 69′ are electrodes that are formed of a metalmaterial and have satisfactory conductivity.

FIG. 45 is a sectional view taken in the extension direction of the gateelectrode 25′ in the p-type transistor pTr1. As illustrated in thedrawing, each gate electrode 25′ is assumed to be extracted with asufficient length up to a position deviated from the active region 71 a′so that contact with this gate electrode 25′ is achieved at a positionnot superimposed on the active region 71 a′.

[Connection Regions 71 c′]

The connection regions 71 c′ are portions inherent in the second elementlayer 50-2 and obtained by patterning the same semiconductor layer asthat of the active region 71 a′. These connection regions 71 c′ areregions that are formed such that the semiconductor layer patterned inan island shape independent from the active region 71 a′ is metalized,and may have the same configuration as the source and drain S/D′ formedin the active region 71 a′. Each connection region 71 c′ is formed in anindependent island shape at a position superimposed on one end side ofeach electrode 29′ to be described below on the outside of the activeregion 71 a′.

Accordingly, in the case of the exemplary this configuration in whichten electrodes 29′ are formed in the second element layer 50-2, theconnection region 71 c′ is formed at each of the ten independentpositions.

As illustrated in the sectional view of FIG. 48, a connection electrode69′ formed of the same layer as the source and drain electrode 69′ maybe formed on this connection region 71 c′.

[Insulation Film 27′]

The insulation film 27′ is formed to embed the p-type transistors pTr1and pTr2 on the one main surface side of the wiring layer 11 and isformed as a planarized insulation film with a planar surface. Theinsulation film 27′ is formed to be joined with the laminated insulationfilm 27 of the first element layer 50-1.

[Electrodes 29′]

The electrodes 29′ are the same as those of the first embodiment. Theelectrodes are arranged regularly at constant intervals and areconfigured as embedded electrodes that are embedded in the insulationfilm 27′.

[Contacts 31′]

The contacts 31′ are the same as those of the first embodiment. Thecontacts are formed selectively in the portions necessary according to acircuit formed using these p-type transistors pTr1 and pTr2 to penetratethrough the insulation film 27′.

<Wiring layer 11>

The wiring layer 11 is the same as that of the other embodiments. Thewiring layer has a configuration in which an upper insulation film 35(illustrated only in the sectional view), upper contacts 37, and wirings39 are disposed from the side of the second element layer 50-2.

<Advantages of Structure According to Fifth Embodiment>

In the semiconductor device 5 having the above-described configuration,the connection regions 71 c′ obtained by metalizing parts of the samesemiconductor layer as the active region 71 a′ are also used aselectrode pads. Therefore, potentials of respective portions of thep-type transistors pTr1 and pTr2 can be extracted to the connectionregions 71 c′ by selectively disposing the contacts 31′ between theconnection regions 71 c′ and the electrodes 29′ and between the p-typetransistors pTr1 and pTr2 and the electrodes 29′. Further, since thecounter electrodes 29 connected to the portions of the n-typetransistors nTr1 and nTr2 are joined with the electrodes 29′, thepotentials of the respective portions of the n-type transistors nTr1 andnTr2 can be extracted to these connection regions 71 c′ via thesecounter electrodes 29 and these electrodes 29′.

As a result, as in the first embodiment, a desired circuit can be formedby the selection of the disposition of the contacts 31, 31′, and 37without depending on only routing of the counter electrodes 29, theelectrodes 29′, and the wirings 39. As a result, miniaturization of thesemiconductor device can be achieved.

<5-(2) Manufacturing Method>

Next, a method of manufacturing the semiconductor device according tothe fifth embodiment will be described in detail with reference to thedrawings. Here, the description will be made in the order of <process ofmanufacturing first element layer 50-1>, <process of manufacturingsecond element layer 50-2>, and <lamination process>.

<Process of Manufacturing First Element Layer 50-1>

FIGS. 49 to 52 are diagrams illustrating manufacturing processes todescribe processes of manufacturing the first element layer 50-1 and areplan views illustrating one main surface side of the support substrate15. As illustrated in these drawings, the first element layer 50-1 ismanufactured as follows.

First, as illustrated in FIG. 49, which is a diagram (part 1)illustrating the manufacturing process, the plurality of active regions71 a obtained by patterning the semiconductor layer are pattern-formedon the one main surface side of the support substrate 15. When asemiconductor substrate is used as the support substrate 15, the frontsurface layer of the semiconductor substrate is processed as the convexactive regions 71 a, and the front surface of the semiconductorsubstrate is covered with an insulation film on the bottoms of theactive regions 71 a.

Thereafter, n-type sources and drains S/D are formed in the activeregions 71 a using dummy gates (not illustrated here) as masks. Next,the source and drain electrodes 69 traversing the active regions 71 aare formed on the tops of the respective sources and drains S/D.

Next, as illustrated in FIG. 50, which is a diagram (part 2)illustrating the manufacturing process, the above-described dummy gatesare removed, and then the gate electrodes 25 are formed via the gateinsulation film (not illustrated here) to traverse the active regions 71a between the sources and drains S/D.

Thereafter, as illustrated in FIG. 51, which is a diagram (part 3)illustrating the manufacturing process, the laminated insulation film 27(not illustrated here) is formed on the one main surface side of thesupport substrate 15 to cover the gate electrodes 25. Subsequently, thecontacts 31 penetrating this laminated insulation film 27 and reachingthe gate electrodes 25 and the source and drain electrodes 69 are formedin the portions selected according to necessity. Thereafter, thelaminated insulation film 27 is further accumulated.

After the above-described processes, as illustrated in FIG. 52, which isa diagram (part 4) illustrating the manufacturing process, the counterelectrodes 29 of which parts are connected to the contacts 31 are formedby applying an embedded-electrode process (a so-called damasceneprocess) to the accumulated laminated insulation film 27. In particular,here, it is important to form the counter electrodes 29 with theconstant shape, while the constant intervals are maintained.

As described above, the above-described first element layer 50-1 can beobtained. The processing order is not particularly limited except thatthe contacts 31 are formed only in the portions selected from the presetportions and the counter electrodes 29 are formed while the constantintervals are maintained, and the manufacturing of the above-describedfirst element layer 50-1 is performed in a normal order. For example, adual damascene process may be applied when the contacts 31 and thecounter electrodes 29 are formed.

<Process of Manufacturing Second Element Layer 50-2>

FIGS. 53 to 56 are diagrams illustrating manufacturing processes todescribe processes of manufacturing the second element layer 50-2 andare plan views illustrating one main surface side of a manufacturingsubstrate 73. As illustrated in these drawings, the second element layer50-2 is manufactured as follows.

First, as illustrated in FIG. 53, which is a diagram (part 1)illustrating the manufacturing process, the plurality of active regions71 a′ obtained by patterning the semiconductor layer and the connectionregions 71 c′ with an island shape independent from the active regionare pattern-formed on the one main surface side of the manufacturingsubstrate 73 with an insulation property. When a semiconductor substrateis used as the manufacturing substrate 73, the front surface layer ofthe semiconductor substrate is processed as the convex active regions 71a′ and the island-shaped connection regions 71 c′, and the front surfaceof the semiconductor substrate is covered with an insulation film on thebottoms of the active regions 71 a′ and the connection regions 71 c′.

Thereafter, n-type sources and drains S/D′ are formed in the activeregions 71 a′ using dummy gates (not illustrated here) as masks.Further, in the same process as the process of forming the sources anddrains S/D′, the connection regions 71 c′ are metalized. Next, thesource and drain electrodes 69′ traversing the active regions 71 a′ areformed on the tops of the respective sources and drains S/D′. In thesame process as this process, the connection electrodes 69 c′ are formedon the tops of the connection regions 71 c′.

Next, as illustrated in FIG. 54, which is a diagram (part 2)illustrating the manufacturing process, the above-described dummy gatesare removed, and then the gate electrodes 25′ are formed via the gateinsulation film (not illustrated here) to traverse the active regions 71a′ between the sources and drains S/D′.

Thereafter, as illustrated in FIG. 55, which is a diagram (part 3)illustrating the manufacturing process, the laminated insulation film27′ (not illustrated here) is formed on the one main surface side of themanufacturing substrate 73 to cover the gate electrodes 25′.Subsequently, the contacts 31′ penetrating this laminated insulationfilm 27′ and reaching the gate electrodes 25′, the source and drainelectrodes 69′, and the connection electrodes 69 c′ are formed in theportions selected according to necessity. Thereafter, the laminatedinsulation film 27′ is further accumulated.

After the above-described processes, as illustrated in FIG. 56 which isthe diagram (part 4) illustrating the manufacturing process, the counterelectrodes 29′ of which parts are connected to the contacts 31′ areformed by applying an embedded-electrode process (a so-called damasceneprocess) to the accumulated laminated insulation film 27′. Inparticular, here, it is important to form the counter electrodes 29′with the constant shape while the constant intervals are maintained.

As described above, the above-described second element layer 50-2 can beobtained. The processing order is not particularly limited except thatthe contacts 31′ are formed only in the portions selected from thepreset portions and the electrodes 29′ are formed while the constantintervals are maintained, and the manufacturing of the above-describedsecond element layer 50-2 is performed in a normal order. For example, adual damascene process may be applied when the contacts 31′ and theelectrodes 29′ are formed.

<Lamination Process>

FIGS. 57 and 58 are diagrams illustrating a laminating process todescribe the process of laminating the first element layer 50-1 and thesecond element layer 50-2 and correspond to the sectional views takenalong the line A-A′ of the above-described plan views. As illustrated inthe drawings, the process of laminating the first element layer 50-1 andthe second element layer 50-2 is performed as follows.

First, as illustrated in FIG. 57, which is a diagram (part 1)illustrating the laminating process, the first element layer 50-1 andthe second element layer 50-2 are disposed to face each other so thatthe counter electrodes 29 of the first element layer 50-1 face theelectrodes 29′ of the second element layer 50-2. At this time, the firstelement layer 50-1 and the second element layer 50-2 are aligned so thatthe counter electrodes 29 and the electrodes 29′ correspond to eachother in a one-to-one manner. In this state, the counter electrodes 29of the first element layer 50-1 are joined with the electrodes 29′ ofthe second element layer 50-2. Further, the first element layer 50-1 isbonded to the second element layer 50-2 by joining the laminatedinsulation film 27 of the first element layer 50-1 with the insulationfilm 27′ of the second element layer 50-2.

Next, as illustrated in FIG. 58, which is a diagram (part 2)illustrating the laminating process, the manufacturing substrate 73 ispeeled from the side of the second element layer 50-2. When asemiconductor substrate is used as the manufacturing substrate 73, thesemiconductor substrate is cut until the insulation film on the bottomsof the active regions 71 a′ and the connection regions 71 c′ is exposed,and the insulation film is also removed, as necessary.

Thereafter, as illustrated in FIGS. 45 and 46, the wiring layer 11 isformed on the side of the second element layer 50-2. The forming of thewiring layer 11 is performed in the same way as that described in thefirst embodiment with reference to FIG. 21. As described above, thesemiconductor device 5 is completed.

<Advantages of Manufacturing Method According to Fifth Embodiment>

According to the above-described manufacturing method, the semiconductordevice 5 with the above-described configuration can be manufactured.Since the counter electrodes 29 of the first element layer 50-1 and theelectrodes 29′ of the second element layer 50-2 are formed in theconstant shapes while the constant intervals are maintained, it ispossible to form the counter electrodes 29 and the electrodes 29′ ofwhich heights are constantly maintained. As a result, when the firstelement layer 50-1 and the second element layer 50-2 are laminated to bebonded, adhesion can be improved, and thus the joining strength of thefirst element layer 50-1 and the second element layer 50-2 can beensured.

5-(3) Modification Example 1 (Example of Lamination Structure of 3 ormore Layers)

FIG. 59 is a sectional view illustrating a schematic configuration of asemiconductor device 5′ according to modification example 1 of the fifthembodiment. The semiconductor device 5′ of modification example 1illustrated in the drawing has a configuration in which three or moresemiconductor layers are laminated. Here, an example of a 3-layeredlamination structure in which a third element layer 50-3 is furtherlaminated on the side of the second element layer 50-2 is illustrated.

In this case, the configurations of the third element layer 50-3 andupper element layers are assumed to be the same as those of the secondelement layer 50-2. The same intermediate layer 13 as that described inthe second embodiment may be disposed with the same configurationbetween the second element layer 50-2 and the third element layer 50-3and the upper element layers.

<5-(4) Manufacturing Method of Modification Example 1>

Manufacturing of the semiconductor device 5′ of such modificationexample 1 is performed as follows.

First, as illustrated in FIG. 60, which is a diagram (part 1)illustrating a laminating process, the first element layer 50-1 and thesecond element layer 50-2 are laminated, and a manufacturing substrateon the side of the second element layer 50-2 is peeled. So far, themanufacturing is performed in the same way as that described in thefifth embodiment. Thereafter, the intermediate layer 13 is formed on theside of the second element layer 50-2. The forming of the intermediatelayer 13 is performed as in the forming of the intermediate layer 13-1described in the second embodiment with reference to FIG. 26.

Next, as illustrated in FIG. 61, which is a diagram (part 2)illustrating a laminating process, the third element layer 50-3 islaminated on the surface in which the intermediate electrodes 45 areformed in the intermediate layer 13. The process of manufacturing thethird element layer 50-3 is performed as in the process of manufacturingthe second element layer 50-2 described in the fifth embodiment withreference to FIGS. 53 to 56. The laminating of the third element layer50-3 on the intermediate layer 13 is performed as in the joining of theintermediate electrodes 45 of the intermediate layer 13 with theelectrodes 29′ of the third element layer 50-3 in the one-to-one manner.Thereafter, a manufacturing substrate 73 is peeled from the thirdelement layer 50-3.

Subsequently, as illustrated in FIG. 59, the semiconductor device 5′ ofmodification example 1 is completed by forming a wiring layer 11 on thethird element layer 50-3.

A lamination example of a structure of three or more layers when thepresent technology is applied to a configuration including asemiconductor element with a FIN structure is not limited to thismodification example 1. For example, as described in the secondembodiment, a configuration in which element layers which all have thesame configuration in addition to a first element layer are laminatedvia intermediate layers can also be exemplified.

In the semiconductor device 5′ of the above-described modificationexample 1, potentials of the portions of the transistors of each layercan be also extracted up to the connection regions 71 c′ of theuppermost layer. As a result, it is possible to achieve miniaturizationof the semiconductor device 5′ in which a plurality of element layerswith the FIN structure such as three or more element layers arelaminated.

<5-(5) Modification Example 2 (Example of Direct Connection BetweenContacts)>

Sectional views of FIGS. 62 to 65 are sectional views illustrating aschematic configuration of a semiconductor device 5″ of modificationexample 2 of the fifth embodiment. These sectional views correspond tothe portions taken along the lines A-A′, B-B′, C1-C1′, and C2-C2′ of theplan views of FIGS. 42 to 45 illustrating the configuration of thesemiconductor device of the fifth embodiment. The semiconductor device5″ of modification example 2 illustrated in these drawings is differentfrom the semiconductor device of the fifth embodiment in that a secondelement layer 50-2″ includes no connection regions obtained bymetalizing a semiconductor layer. The remaining configuration is thesame.

That is, in the second element layer 50-2″ included in the semiconductordevice 5″ of modification example 2, only connection electrodes 69 c′obtained by patterning the same layer as source and drain electrodes 69′in an independent island shape are formed on the outside of activeregions 71 a′ formed by the semiconductor layer. Electrodes 29′ areformed to be connected to the connection electrodes 69 c′ in portionsselected according to necessity.

In the semiconductor device 5″ with such a configuration according tomodification example 2, potentials of the portions of the transistors ofeach layer can be extracted up to the connection electrodes 69 c′ of theuppermost layer. As a result, it is possible to achieve miniaturizationof the semiconductor device 5″ in which a plurality of element layerswith the FIN structure such as three or more element layers arelaminated.

The above-described fifth embodiment including modification examples 1and 2 of the fifth embodiment can be applied the laminate forming thedriving circuit of the solid-state imaging device described in thefourth embodiment.

<<Sixth Embodiment>>[Example of Lamination Structure using TantalumOxide Layer]

6-(1) Structure

FIG. 66 is a sectional view illustrating characteristic portions of asemiconductor device according to a sixth embodiment. The semiconductordevice 6 of the sixth embodiment illustrated in the drawing ischaracterized by the fact that a tantalum oxide layer 81 is formed inthe semiconductor device of the first embodiment described withreference to FIGS. 1 to 12. The sixth embodiment is different from thefirst embodiment in that contacts 31 and 31′ are formed in all of theportions of a first element layer 10-1 and a second element layer 10-2.Hereinafter, the details of the semiconductor device 6 of the sixthembodiment will be described selecting only portions different fromthose of the first embodiment. The same reference numerals are given tothe same constituent elements as those of the first embodiment and therepeated description will be omitted.

[Contacts 31 of First Element Layer 10-1]

Contacts 31 of the first element layer 10-1 are formed in all of theportions that connect gate electrodes 25 of an n-type transistor nTr,here, sources and drains S/D (not illustrated here), to counterelectrodes 29.

[Contacts 31′ of Second Element Layer 10-2]

Contacts 31′ of the second element layer 10-2 are formed in all of theportions that connect gate electrodes 25′ of a p-type transistor pTr,here, sources and drains S/D′ (not illustrated here) and connectionregions 21 c′, to electrodes 29′.

[Tantalum Oxide Layer 81]

The tantalum oxide layer 81 is formed to be interposed between the firstelement layer 10-1 and the second element layer 10-2. Thus, the tantalumoxide layer 81 is formed between all of the counter electrodes 29 of thefirst element layer 10-1 and all of the electrodes 29′ of the secondelement layer 10-2 disposed to face each other in a one-to-one manner.

A diffusion portion 81 a to which at least one of the material of thecounter electrode 29 and the material of the electrode 29′ diffuses isformed only in the tantalum oxide layer 81 between the counter electrode29 and the electrode 29′ to be connected according to necessity. Thediffusion portion 81 a becomes a portion with conductivity by thediffusion of the material of the electrode.

6-(2) Manufacturing Method

The above-described semiconductor device 6 is manufactured as follows.

First, as illustrated in FIG. 67, the first element layer 10-1 in whichthe contacts 31 are formed in all of the portions and the second elementlayer 10-2 in which the contacts 31′ are formed in all of the portionsare laminated with the tantalum oxide layer 81 interposed therebetween.The tantalum oxide layer 81 may be formed on the side of the firstelement layer 10-1, may be formed on the side of the second elementlayer 10-2, or may be formed on both sides of the first and secondelement layers, before the first element layers 10-1 and the secondelement layer 10-2 are laminated. At this time, the counter electrodes29 of the first element layer 10-1 and the electrodes 29′ of the secondelement layer 10-2 correspond to each other in a one-to-one manner.Thereafter, the wiring layer 11 is formed on the side of the secondelement layer 10-2. At this time, even in the wiring layer 11, uppercontacts 37 are formed in all of the portions and wirings 39 connectedto the upper contacts 37 are formed.

In this state, using the selected wiring 39 as a terminal, a voltage isapplied between the counter electrode 29 and the electrode 29′ to beconnected according to necessity. Thus, at least one of the electrodematerials of the counter electrode 29 and the electrode 29′ diffuses tothe tantalum oxide layer 81 between the counter electrode 29 and theelectrode 29′ of the portion to which the voltage is applied. Thus, thediffusion portion 81 a with conductivity illustrated in FIG. 66 isformed only in a necessary portion by the application of the voltagebetween the selected counter electrode 29 and the selected electrode29′.

At this time, when the counter electrode 29 and the electrode 29′ areformed of copper (Cu), copper (Cu) diffuses from both of the counterelectrode 29 and the electrode 29′ to the tantalum oxide layer 81 andthe diffusion portion 81 a with conductivity is formed.

As described above, the semiconductor device 6 of the sixth embodimentis completed.

According to this sixth embodiment, after the semiconductor device ismanufactured through the semiconductor process, a desired circuit can beformed by application of a voltage via the selected wirings 39.

<6-(3) Modification Example>

FIG. 68 is a sectional view illustrating characteristic portionsaccording to a modification example of the sixth embodiment. Asemiconductor device 6′ of the modification example illustrated in thedrawing is different from the semiconductor device 6 of the sixthembodiment in that a tantalum oxide layer 81 is partially formed.Further, contacts 31 and 31′ are assumed to be formed in selectedportions in a first element layer 10-1 and a second element layer 10-2.Hereinafter, the details of the semiconductor device 6′ of themodification example of the sixth embodiment will be described selectingonly characteristic portions. The same reference numerals are given tothe same constituent elements as those of the first and sixthembodiments and the repeated description will be omitted.

[Contacts 31 of First Element Layer 10-1]

Contacts 31 of the first element layer 10-1 are formed in portionsselected from portions that connect gate electrodes 25 of an n-typetransistor nTr, here, sources and drains S/D (not illustrated here), tocounter electrodes 29.

[Contacts 31′ of Second Element Layer 10-2]

Contacts 31′ of the second element layer 10-2 are formed in portionsselected from portions that connect gate electrodes 25′ of a p-typetransistor pTr, here, sources and drains S/D′ (not illustrated here) andconnection regions 21 c′, to electrodes 29′.

[Tantalum Oxide Layer 81]

The tantalum oxide layer 81 is formed between electrodes selected fromthe counter electrodes 29 of the first element layer 10-1 and theelectrodes 29′ of the second element layer 10-2. Here, in the drawing, aportion in which the tantalum oxide layer 81 is interposed between bothof two counter electrode 29 and electrode 29′ is illustrated.

A diffusion portion 81 a to which at least one of the material of thecounter electrode 29 and the material of the electrode 29′ diffuses isformed only in the tantalum oxide layer 81 between the counter electrode29 and the electrode 29′ to be connected according to necessity. Thediffusion portion 81 a becomes a portion with conductivity by thediffusion of the material of the electrode.

<6-(4) Manufacturing Method of Modification Example>

The semiconductor device 6′ of such a modification example ismanufactured as follows.

First, as illustrated in a sectional view (part 1) of FIG. 69, the firstelement layer 10-1 is prepared. A process of manufacturing the firstelement layer 10-1 is performed in the same way as that described in thefirst embodiment. Thereafter, the counter electrode 29 selected in thefirst element layer 10-1 is thinned and a groove h is formed on the topof the counter electrode 29 in a laminated insulation film 27.

Next, as illustrated in a sectional view (part 2) of FIG. 70, thetantalum oxide layer 81 is formed in the groove h formed in the firstelement layer 10-1. At this time, the surface of the tantalum oxidelayer 81, the surface of the laminated insulation film 27, and thesurface of the counter electrode 29 that is not thinned are set to havethe same height.

Next, as illustrated in a sectional view (part 3) of FIG. 71, the secondelement layer 10-2 prepared in the same manufacturing process as thatdescribed in the first embodiment is laminated on the first elementlayer 10-1. At this time, as in the first embodiment, the first elementlayer 10-1 and the second element layer 10-2 are laminated so that thecounter electrodes 29 of the first element layer 10-1 and the electrodes29′ of the second element layer 10-2 correspond to each other in aone-to-one manner. Thereafter, a semiconductor layer 21′ obtained bythinning a semiconductor substrate 20 on the side of the second elementlayer 10-2 is formed by cutting the semiconductor substrate 20 on theside of the second element layer 10-2 until connection regions 21 c′ areexposed.

A tantalum oxide layer 81 may be formed also in the second element layer10-2, as in the first element layer 10-1. In this case, the tantalumoxide layer 81 may not be formed in the first element layer 10-1.

Next, as illustrated in a sectional view (part 4) of FIG. 72, a wiringlayer 11 is formed on the side of the second element layer 10-2. At thistime, in the wiring layer 11, upper contacts 37 are formed in selectedportions and wirings 39 connected to the upper contacts 37 are formed.

After the above-described processes, using the selected wiring 39 as aterminal, a voltage is applied between the counter electrode 29 and theelectrode 29′ to be connected according to necessity. Thus, at least oneof the electrode materials of the counter electrode 29 and the electrode29′ diffuses to the tantalum oxide layer 81 between the counterelectrode 29 and the electrode 29′ of the portion to which the voltageis applied.

Thus, the diffusion portion 81 a with conductivity illustrated in FIG.68 is formed only in the selected portion. At this time, when thecounter electrode 29 and the electrode 29′ are formed of copper (Cu),copper (Cu) diffuses from both of the counter electrode 29 and theelectrode 29′ to the tantalum oxide layer 81 and the diffusion portion81 a with conductivity is formed.

As described above, the semiconductor device 6′ of the modificationexample of the sixth embodiment is completed.

According to the modification example of the sixth embodiment, after thesemiconductor device is manufactured through the semiconductor process,a desired circuit can be formed by application of a voltage via theselected wirings 39. In this case, circuit design with a higher degreeof freedom can be realized by the selection of the gap between thecounter electrode 29 and the electrode 29′ in which the tantalum oxidelayer 81 is formed and the selection of the formation of the diffusionportion 81 a by the application of a voltage to the tantalum oxide layer81 in addition to the selection of the portions in which the contacts 31and 31′ are disposed.

In the above-described sixth embodiment, the configuration in which thetantalum oxide layer 81 is formed in the configuration of the firstembodiment has been described. However, this sixth embodiment isapplicable to all of the second to fifth embodiments including themodification examples, and the same advantages can be obtained.

<<Seventh Embodiment>> [Electronic Device using Solid-State ImagingDevice]

The solid-state imaging device related to the present technologydescribed in the above-described fourth embodiment can be provided, forexample, as a solid-state imaging device for an electronic device suchas a camera system such as a digital camera or a video camera, acellular phone having an imaging function, or other devices including animaging function.

FIG. 73 is a diagram illustrating the configuration of a camera using asolid-state imaging device and an electronic device using the camera asexamples of a camera and an electronic device according to an embodimentof the present technology. An electronic device 90 according to thisembodiment includes a video camera 91 capable of capturing a still imageand a moving image. The video camera 91 includes a solid-state imagingdevice 4, an optical system 93 that guides incident light to alight-receiving sensor unit of the solid-state imaging device 4, ashutter device 94, a driving circuit 95 that drives the solid-stateimaging device 4, and a signal processing circuit 96 that processes anoutput signal of the solid-state imaging device 4.

The solid-state imaging device 4 is a solid-state imaging device thathas the configuration described in the above-described fourthembodiment. The optical system (optical lens) 93 forms image light(incident light) from a subject as an image on an imaging surface of thesolid-state imaging device 4. A plurality of pixels are arrayed in theimaging surface and incident light from the optical system 93 is guidedto an imaging region in which photoelectric conversion units included inthe pixels are arrayed. Thus, signal charge is accumulated in thephotoelectric conversion units of the solid-state imaging device 4 for agiven period. The optical system 93 may also be an optical lens systemthat includes a plurality of optical lenses. The shutter device 94controls a light radiation period and a light blocking period for thesolid-state imaging device 4. The driving circuit 95 supplies drivingsignals to the solid-state imaging device 4 and the shutter device 94and controls an operation of outputting a signal to the signalprocessing circuit 96 of the solid-state imaging device 4 and a shutteroperation performed by the shutter device 94 based on the supplieddriving signals (timing signals). That is, the driving circuit 95performs an operation of transmitting a signal from the solid-stateimaging device 4 to the signal processing circuit 96 by supplying thedriving signals (timing signals). The signal processing circuit 96performs various kinds of signal processing on the signal transmittedfrom the solid-state imaging device 4. A video signal subjected to thesignal processing is stored in a storage medium such as a memory or isoutput to a monitor.

It should be understood by those skilled in the art that variousmodifications, combinations, sub-combinations and alterations may occurdepending on design requirements and other factors insofar as they arewithin the scope of the appended claims or the equivalents thereof.

Additionally, the present technology may also be configured as below.

(1) A semiconductor device including:

a semiconductor layer that includes an active region;

semiconductor elements that are formed using the active region;

connection regions that are obtained by metalizing parts of thesemiconductor layer in an island shape isolated from the active region;

an insulation film that is formed to cover one main surface side of thesemiconductor layer;

electrodes that are disposed to face the semiconductor elements and theconnection regions via the insulation film; and

contacts that penetrate through the insulation film to be selectivelyformed in portions according to necessity among portions that connectthe semiconductor elements or the connection regions to the electrodes.

(2) The semiconductor device according to (1), wherein connection statesbetween the semiconductor elements and the connection regions via theelectrodes are selected by selection of positions at which the contactsare formed.

(3) The semiconductor device according to (1) or (2), further including:

counter electrodes that are disposed at positions facing the electrodesand are connected to the electrodes;

a laminated insulation film that is formed over one main surface side ofthe insulation film to cover the counter electrodes;

other semiconductor elements that are formed over the laminatedinsulation film of an opposite side to the counter electrodes with thelaminated insulation film interposed therebetween; and

other contacts that penetrate through the laminated insulation film tobe selectively formed in portions according to necessity among portionsthat connect the other semiconductor elements to the counter electrodes.

(4) The semiconductor device according to (3), wherein the othersemiconductor elements are formed using a front surface layer of asemiconductor substrate.

(5) The semiconductor device according to any one of (1) to (4), whereinthe plurality of electrodes are disposed at constant intervals within asurface of the insulation film.

(6) The semiconductor device according to any one of (1) to (5), furtherincluding:

an upper insulation film that is formed over an opposite side to theinsulation film with the semiconductor layer interposed therebetween;

an upper contact that penetrates through the upper insulation film to beselectively formed in a portion according to necessity among portionsconnected to the connection regions or the active region; and

a wiring that is formed over the upper insulation film so that thewiring is connected to the upper contact.

(7) The semiconductor device according to any one of (1) to (6), whereinthe insulation film, the electrodes, and the contacts are formed on bothsurfaces of the semiconductor layer.

(8) The semiconductor device according to any one of (1) to (7), whereina support substrate is formed to come into contact with the electrodesdisposed on one surface of the semiconductor layer.

(9) The semiconductor device according to any one of (1) to (8),

wherein the semiconductor layer is patterned in the active region andthe connection regions, and

wherein the semiconductor elements each include a gate electrodetraversing the patterned active region.

(10) The semiconductor device according to (3), wherein, between anelectrode according to necessity among the plurality of electrodes andthe counter electrode disposed to face this electrode, a tantalum oxidelayer having conductivity is formed by diffusing at least one ofmaterials of this electrode and this counter electrode.

(11) The semiconductor device according to (3), wherein a tantalum oxidelayer is formed between all of the plurality of electrodes and all ofthe plurality of counter electrodes disposed to face the electrodes, and

wherein, to the tantalum oxide layer located between an electrodeaccording to necessity among the plurality of electrodes and the counterelectrode disposed to face this electrode, at least one of materials ofthis electrode and this counter electrode diffuses.

(12) The semiconductor device according to (3), wherein thesemiconductor elements and the other semiconductor elements are formedusing different semiconductor materials.

(13) The semiconductor device according to (3), wherein a digitalcircuit is formed by connecting the semiconductor elements to the othersemiconductor elements via the connection electrodes and the connectionregions.

(14) The semiconductor device according to any one of (1) to (13),wherein the semiconductor layer is formed of silicon (Si), germanium(Ge), silicon germanium (SiGe), silicon carbide (SiC), carbon (C),carbon nanotube, graphene, gallium arsenide (GaAs), and indium galliumarsenide (InGaAs).

(15) A solid-state imaging device including:

an imaging substrate that includes a photoelectric conversion unit;

a semiconductor layer that includes an active region and is formed overone main surface side of the imaging substrate;

semiconductor elements that are formed using the active region;

connection regions that are obtained by metalizing parts of thesemiconductor layer in an island shape isolated from the active region;

an insulation film that is formed to cover one main surface side of thesemiconductor layer;

electrodes that are disposed to face the semiconductor elements and theconnection regions via the insulation film; and

contacts that penetrate through the insulation film to be selectivelyformed in portions according to necessity among portions that connectthe semiconductor elements or the connection regions to the electrodes.

(16) A method of manufacturing a semiconductor device, including:

forming an active region in a semiconductor layer and forming connectionregions obtained by metalizing the semiconductor layer in an islandshape isolated from the active region;

forming semiconductor elements using the active region;

forming an insulation film that covers one main surface side of thesemiconductor layer;

forming contacts that penetrate the insulation film selectively inportions according to necessity among portions that reach thesemiconductor elements or the connection regions; and

forming electrodes of which parts are connected to the contacts inpositions at which the semiconductor elements face the connectionregions via the insulation film.

(17) The method of manufacturing the semiconductor device according to(16), further including:

bonding an element substrate that includes counter electrodes disposedto face the electrodes, to a substrate in which the semiconductorelements and the electrodes are formed, so that the electrodes arejoined with the counter electrodes.

(18) The method of manufacturing the semiconductor device according to(16) or (17), wherein the plurality of electrodes are formed at constantintervals within a surface of the insulation film.

(19) The method of manufacturing the semiconductor device according toany one of (16) to (18), further including: after the electrodes areformed,

bonding a substrate to a side of the electrodes;

exposing the connection regions from an opposite side to the insulationfilm;

forming an insulation film over the semiconductor layer to which theconnection regions are exposed; and

forming contacts penetrating the insulation film selectively in portionsaccording to necessity among portions reaching the connection regions orthe active region.

(20) The method of manufacturing the semiconductor device according toany one of (16) to (19), wherein, in the step of forming of theelectrodes, grooves are formed in the insulation film, electrodematerial films are formed to be embedded in the grooves, and theelectrode material films on the insulation film are removed, so that theelectrode material films remain only in the grooves.

The present disclosure contains subject matter related to that disclosedin Japanese Priority Patent Application JP 2012-218000 filed in theJapan Patent Office on Sep. 28, 2012, the entire content of which ishereby incorporated by reference.

What is claimed is:
 1. A semiconductor device comprising: asemiconductor layer that includes an active region; semiconductorelements that are comprised of the active region; connection regionsthat are island-shaped metalized parts of the semiconductor layerisolated from the active region; an insulation film covering one mainsurface side of the semiconductor layer; electrodes facing thesemiconductor elements and the connection regions via the insulationfilm; a first contact penetrating through the insulation film in a firstportion that connects the semiconductor elements or in the connectionregions to the electrodes; counter electrodes at positions facing theelectrodes and connected to the electrodes; a laminated insulation filmover one main surface side of the insulation film to cover the counterelectrodes; other semiconductor elements over the laminated insulationfilm of an opposite side to the counter electrodes with the laminatedinsulation film interposed therebetween; a second contact penetratingthrough the laminated insulation film in a second portion that connectsthe other semiconductor elements to the counter electrodes; and betweenat least one of the electrodes and the counter electrode, a tantalumoxide layer having conductivity and material of the electrodes, materialof the counter electrode, or materials of both the electrodes and thecounter electrode diffused therein.
 2. The semiconductor deviceaccording to claim 1, wherein connection states between thesemiconductor elements and the connection regions via the electrodes areselected by selection of positions at which the contacts are formed. 3.The semiconductor device according to claim 1, wherein the othersemiconductor elements are formed using a front surface layer of asemiconductor substrate.
 4. The semiconductor device according to claim1, wherein the electrodes are disposed at constant intervals within asurface of the insulation film.
 5. The semiconductor device according toclaim 1, further comprising: an upper insulation film over an oppositeside to the insulation film with the semiconductor layer interposedtherebetween; an upper contact penetrating through the upper insulationfilm in a portion connected to the connection regions or in the activeregion; and a wiring that over the upper insulation film and connectedto the upper contact.
 6. The semiconductor device according to claim 1,wherein the insulation film, the electrodes, and the contacts are formedon both surfaces of the semiconductor layer.
 7. The semiconductor deviceaccording to claim 6, wherein a support substrate is in contact with theelectrodes disposed on one surface of the semiconductor layer.
 8. Thesemiconductor device according to claim 1; wherein: the semiconductorlayer is patterned in the active region and the connection regions, andthe semiconductor elements each include a gate electrode traversing thepatterned active region.
 9. A semiconductor device comprising: asemiconductor layer that includes an active region; semiconductorelements comprised of the active region; connection regions that areisland-shaped metallized parts of the semiconductor layer isolated fromthe active region; an insulation film covering one main surface side ofthe semiconductor layer; electrodes facing the semiconductor elementsand the connection regions via the insulation film; a first contactpenetrating through the insulation film in a first portion that connectsthe semiconductor elements or in the connection regions to theelectrodes; counter electrodes at positions facing the electrodes andconnected to the electrodes; a laminated insulation film over one mainsurface side of the insulation film to cover the counter electrodes;other semiconductor elements formed over the laminated insulation filmof an opposite side to the counter electrodes with the laminatedinsulation film interposed therebetween; a second contact penetratingthrough the laminated insulation film in a second portion that connectsthe other semiconductor elements to the counter electrodes; and atantalum oxide layer between the at least one of the electrodes and thecounter electrodes with material of the least one of the electrodes,material of the counter electrodes, or both, diffused to the tantalumoxide layer.
 10. The semiconductor device according to claim 1, whereinthe semiconductor elements and the other semiconductor elements arecomprised of different semiconductor materials.
 11. The semiconductordevice according to claim 1, comprising a digital circuit formed byconnecting the semiconductor elements to the other semiconductorelements via the counter electrodes and the connection regions.
 12. Thesemiconductor device according to claim 1, wherein the semiconductorlayer comprises silicon (Si), germanium (Ge), silicon germanium (SiGe),silicon carbide (SiC), carbon (C), carbon nanotube, graphene, galliumarsenide (GaAs), or indium gallium arsenide (InGaAs).